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Research Output 1996 2018

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Paper
1997

Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs

Surya, C., Wang, W., Fong, W. K., Chan, C. H. & Lai, P. T., Jan 1 1997, p. 59-62. 4 p.

Research output: Contribution to conferencePaper

Power spectrum
Stress relaxation
Chemical activation
Temperature
Hot Temperature
1996

Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs

Surya, C., Wang, W., Fong, W. K., Chan, C. H. & Lai, P. T., Dec 1 1996, p. 77-80. 4 p.

Research output: Contribution to conferencePaper

Power spectrum
Stress relaxation
Chemical activation
Temperature
Hot Temperature