Ilesanmi Adesida, PhD

Provost

  • 9885 Citations
  • 52 h-Index
1978 …2016
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High electron mobility transistors Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
Cutoff frequency Engineering & Materials Science
etching Physics & Astronomy
Transconductance Engineering & Materials Science
Reactive ion etching Engineering & Materials Science
Heterojunctions Engineering & Materials Science
Ohmic contacts Engineering & Materials Science

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Research Output 1978 2016

10 Citations

Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Song, Y., Mohseni, P. K., Kim, S. H., Shin, J. C., Ishihara, T., Adesida, I. & Li, X., Aug 1 2016, In : IEEE Electron Device Letters. 37, 8, p. 970-973 4 p., 7485851.

Research output: Contribution to journalArticle

Wet etching
Aspect ratio
Indium phosphide
Dry etching
Gate dielectrics
9 Citations

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Ofuonye, B., Lee, J., Yan, M., Sun, C., Zuo, J. M. & Adesida, I., Sep 1 2014, In : Semiconductor Science and Technology. 29, 9, 095005.

Research output: Contribution to journalArticle

Heterojunctions
electric contacts
electrical properties
Annealing
annealing
1 Citations

Elevated-temperature annealing effects on AlGaN/GaN heterostructures

Ofuonye, B., Lee, J., Yan, M., Fareed, Q., Ahmad, I., Khan, A. & Adesida, I., Dec 2011, In : Journal of Electronic Materials. 40, 12, p. 2344-2347 4 p.

Research output: Contribution to journalArticle

Heterojunctions
Annealing
annealing
Substrates
Temperature
9 Citations

Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Lee, J., Yan, M., Ofuonye, B., Jang, J., Gao, X., Guo, S. & Adesida, I., Jul 2011, In : Physica Status Solidi (A) Applications and Materials Science. 208, 7, p. 1538-1540 3 p.

Research output: Contribution to journalArticle

Ohmic contacts
low resistance
Metallizing
Heterojunctions
electric contacts
8 Citations

Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation

Pang, L., Seo, H. C., Chapman, P., Adesida, I. & Kim, K., May 2010, In : Journal of Electronic Materials. 39, 5, p. 499-503 5 p.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults