Ilesanmi Adesida, PhD

Provost

  • 10320 Citations
  • 53 h-Index
1978 …2016
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Research Output 1978 2016

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Conference contribution
2008
4 Citations (Scopus)

A bio-inspired single photon detector with suppressed noise and low jitter

Memis, O. G., Katsnelson, A., Mohseni, H., Yan, M., Zhang, S., Hossain, T., Jin, N. & Adesida, I., 2008, Biosensing. Vol. 7035. 70350V

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Single Photon Detector
Jitter
Photons
Detector
Detectors

Compound semiconductors: Illinois contributions and perspective

Adesida, I., 2008, 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Students
Semiconductor materials

Technology for non-recessed short gate length E-mode AlGaN/GaN high-electron mobility transistors

Basu, A., Yan, M., Kumar, V. & Adesida, I., 2008, 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
2007

Advances in Gallium nitride-based electronics

Adesida, I. & Kumar, V., 2007, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 1-6 6 p. 4450046

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium nitride
High electron mobility transistors
Electronic equipment
Nitrides
Optoelectronic devices

Self-aligned AlGaN/GaN high electron mobility transistors

Kumar, V., Kim, D. H., Basu, A. & Adesida, I., 2007, 65th DRC Device Research Conference. p. 39-40 2 p. 4373641

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
2006

Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

Zhao, W., Jin, N., Chen, G., Wang, L. & Adesida, I., 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154274

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohmic contacts
High electron mobility transistors
Passivation
Fabrication
2 Citations (Scopus)

Processes and device technologies for AlGaN/GaN high electron mobility transistors

Adesida, I., Kumar, V., Mohammed, F., Wang, L., Basu, A., Kim, D. H. & Lanford, W., 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154216

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Power amplifiers
2005

Enhancement-mode InAlAs/InGaAs/InP HEMTs with Ir-based gate metallization

Kim, S., Adesida, I. & Hwang, H., 2005, 63rd Device Research Conference Digest, DRC'05. Vol. 2005. p. 259-260 2 p. 1553147

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gates (transistor)
High electron mobility transistors
Metallizing
Metals
Capacitance
2 Citations (Scopus)

Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz

Kumar, V., Chen, G., Guo, S., Peres, B. & Adesida, I., 2005, 63rd Device Research Conference Digest, DRC'05. Vol. 2005. p. 61-62 2 p. 1553055

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Drain current
Contact resistance
Silicon nitride
Microwaves

Indium-phosphide-based mutation-designed materials and waveguides for photonic applications

Abeles, J. H., Whaley, R. D., Kwakernaak, M. H., Khalfin, V. B., Chan, W. K., Shellenbarger, Z. A., Lepore, A. N., Maley, N., Prabhu, A. N., Adesida, I., Rommel, S. L., Bae, J. W. & Jang, J. H., 2005, Integrated Photonics Research and Applications, IPRA 2005. Optical Society of America

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Indium phosphide
indium phosphides
nanofabrication
mutations
Nanotechnology

Processing and device issues in GaN and related compounds

Adesida, I., 2005, 2005 IEEE Workshop on Microelectronics and Electron Devices, WMED. Vol. 2005. p. 8-9 2 p. 1431599

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium nitride
Processing
High electron mobility transistors
Fabrication
Etching

The impact of InAlAs spacer layer on DC characteristics of InP/InAlAs/GaAsSb/InP DHBTs

Cho, S. W., Park, M. S., Kim, T. W., Jang, J. H., Adesida, I. & Pan, N., 2005, 2005 International Semiconductor Device Research Symposium. Vol. 2005. p. 394-395 2 p. 1596152

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heterojunction bipolar transistors
Heterojunctions
2004
1 Citation (Scopus)

GaN electronics with high electron mobility transistors

Adesida, I., Kumar, V., Lee, J. W., Kuliev, A., Schwindt, R. & Lanford, W., 2004, Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004. Vol. 24 I. p. 89-96 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Electronic equipment
Semiconductor devices
Nitrides
Optoelectronic devices
11 Citations (Scopus)

Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

Schwindt, R. S., Kumar, V., Aktas, O., Lee, J. W. & Adesida, I., 2004, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. p. 201-203 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low noise amplifiers
Noise figure
High electron mobility transistors
Temperature
Networks (circuits)
2003

High performance wide-bandgap photonic and electronic devices grown by MBE

Dabiran, A. M., Osinsky, A., Hertog, B., Kauser, M. Z., Chow, P. P., Kumar, V. & Adesida, I., 2003, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium. Kopt, R. F., Baca, A. G., Pearton, S. J. & Ren, F. (eds.). Vol. 11. p. 179-181 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Molecular beam epitaxy
Photonics
Energy gap
Photocurrents
2002
2 Citations (Scopus)

AlGaN/GaN HEMTs on sapphire

Kumar, V. & Adesida, I., 2002, ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems. IEEE Computer Society, 1004070

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Sapphire
Drain current
Metallorganic chemical vapor deposition
Cutoff frequency
6 Citations (Scopus)

Effect of recess length on DC and RF performance of gate-recessed AlGaN/ GaN HEMTs

Kuliev, A., Kumar, V., Schwindt, R., Selvanathan, D., Dabiran, A. M., Chow, P. & Adesida, I., 2002, Proceedings IEEE Lester Eastman Conference on High Performance Devices. p. 428-435 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Gates (transistor)
Ohmic contacts
Voltage measurement
Contact resistance
3 Citations (Scopus)

Monolithnic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications

Jang, J. H., Cueva, G., Sankaralingam, R., Fay, P., Hoke, W. E. & Adesida, I., 2002, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). p. 55-58 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated optoelectronics
High electron mobility transistors
Photodiodes
Wavelength
Substrates
2 Citations (Scopus)

Properties of metamorphic materials and device structures on GaAs substrates

Hoke, W. E., Kennedy, T. D., Torabi, A., Whelan, C. S., Marsh, P. F., Leoni, R. E., Jang, J. H., Adesida, I., Chang, K. L. & Hsieh, K. C., 2002, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., p. 69-70 2 p. 1037763

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Substrates
Optical devices
Structural properties
Electric properties
2001
20 Citations (Scopus)

AlGaN/GaN HFETs for low noise applications

Adesida, I., Lu, W. & Kumar, V., 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2. p. 1163-1168 6 p. 982106

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Energy gap
Electron transport properties
Aluminum Oxide
Metallorganic chemical vapor deposition
Noise figure
2 Citations (Scopus)

Metamorphic double heterojunction InGaAs/InGaAlAs/InAlAs photodiodes on GaAs substrates for 40 Gbit/s long wavelength optical fiber communication

Jang, J. H., Cueva, G., Dumka, D. C., Adesida, I., Fay, P., Hoke, W. E. & Lemonias, P. J., 2001, Conference on Optical Fiber Communication, Technical Digest Series. 4 ed. Vol. 54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical fiber communication
Dark currents
Photodiodes
Heterojunctions
Bandwidth
1 Citation (Scopus)

Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate

Dumka, D. C., Hoke, W. E., Lemonias, P. J., Schwindt, R., Cueva, G. & Adesida, I., 2001, Annual Device Research Conference Digest. p. 49-50 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohmic contacts
High electron mobility transistors
Semiconducting gallium arsenide
Wet etching
Transconductance
2000
3 Citations (Scopus)

A study of on-state and off-state breakdown voltages in GaN MESFETs

Kuliev, A., Lee, C., Lu, W., Piner, E., Bahl, S. R. & Adesida, I., 2000, Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. p. 110-114 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric breakdown
Drain current
Voltage measurement
Electron traps
Light emitting diodes
1999
3 Citations (Scopus)

High-speed MSM-HEMT and PIN-HEMT monolithic photoreceivers

Fay, P., Caneau, C. & Adesida, I., 1999, SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings. IEEE, Vol. 2. p. 537-540 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

MSM (semiconductors)
High electron mobility transistors
high electron mobility transistors
high speed
bandwidth
1996
1 Citation (Scopus)

160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor

Mahajan, A., Arafa, M., Fay, P., Caneau, C. & Adesida, I., 1996, Annual Device Research Conference Digest. IEEE, p. 132-133 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Heterojunctions
Metallorganic vapor phase epitaxy
Transconductance
Fabrication
2 Citations (Scopus)

Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

Diogu, K. K., Harris, G. L., Mahajan, A., Adesida, I., Moeller, D. F. & Bertram, R. A., 1996, Annual Device Research Conference Digest. IEEE, p. 160-161 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Operational amplifiers
Fabrication
Networks (circuits)
Chemical properties
Lithography
5 Citations (Scopus)

High performance self-aligned SiGe p-type modulation-doped field-effect transistors

Arafa, M., Ismail, K., Chu, J. O. & Adesida, I., 1996, Annual Device Research Conference Digest. IEEE, p. 24-25 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Ohmic contacts
Cutoff frequency
Transconductance
Ultrahigh vacuum
1995

15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver

Fay, P., Wohlmuth, W., Caneau, C. & Adesida, I., 1995, Annual Device Research Conference Digest. IEEE, p. 70-71 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated optoelectronics
High electron mobility transistors
Photodetectors
Bandwidth
Field effect transistors

High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

Arafa, M., Fay, P., Ismail, K., Chu, J. O., Meyerson, B. S. & Adesida, I., 1995, Annual Device Research Conference Digest. IEEE, p. 20-21 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Heterojunctions
Cutoff frequency
Transconductance
Ultrahigh vacuum
4 Citations (Scopus)

Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes

Wohlmuth, W. A., Adesida, I. & Caneau, C., 1995, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2550. p. 256-265 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photodetectors
Tin oxides
tin oxides
photometers
Semiconductor materials
1994
1 Citation (Scopus)

Effects of reactive ion etching on phonon-electron interactions in InAlAs-InGaAs modulation-doped field-effect transistor structures studied by raman scattering

Maslar, J. E., Dorsten, J. F., Bohn, P. W., Agarwala, S., Adesida, I., Caneau, C. & Bhat, R., 1994, Growth, Processing, and Characterization of Semiconductor Heterostructures. Materials Research Society, Vol. 326. p. 377-382 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron-phonon interactions
Reactive ion etching
High electron mobility transistors
Raman scattering
Two dimensional electron gas

Optical characterization of InGaAs/InP quantum wires and dots

Gu, S. Q., Reuter, E., Xu, Q., Chang, H., Panepucci, R., Adesida, I. & Bishop, S. G., 1994, Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society, Vol. 324. p. 181-186 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wires
Semiconductor quantum dots
Wire
etching
Photoluminescence

Photoluminescence characterization of InGaAs/InP quantum dots

Gu, S. Q., Reuter, E., Xu, Q., Panepucci, R., Chen, A. C., Chang, H., Adesida, I., Cheng, K. Y., Bishop, S. G., Caneau, C. & Bhat, R., 1994, Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers, Vol. 2364. p. 406-411 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum dots
Photoluminescence
quantum dots
Semiconductor quantum wells
photoluminescence
1 Citation (Scopus)

Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors

Dorsten, J. F., Maslar, J. E., Zhang, Y., Rauchfuss, T. B., Bohn, P. W., Agarwala, S., Adesida, I., Caneau, C. & Bhat, R. J., 1994, Proceedings of SPIE - The International Society for Optical Engineering. Dai, H-L. & Sibener, S. J. (eds.). Society of Photo-Optical Instrumentation Engineers, Vol. 2125. p. 51-58 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lewis base
Self assembled monolayers
Electronic properties
Semiconductor materials
Surface states
1993
3 Citations (Scopus)

Highly selective etching of InGaAd on InAlAs in HBr plasma

Adesida, I., Agarwala, S., Caneau, C. & Bhat, R., 1993, 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, p. 529-532 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Etching
Plasmas
Ions
2 Citations (Scopus)

High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS

Adesida, I., Nummila, K., Tong, M., Caneau, C. & Bhat, R., 1993, 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, p. 405-408 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallorganic vapor phase epitaxy
High electron mobility transistors
Cutoff frequency
Transconductance
Heterojunctions
1 Citation (Scopus)

RF Microcoils patterned using microlithographic techniques for use as microsensors in NMR

Peck, T. L., La Valle, L., Magin, R. L., Adesida, I., Wheeler, B. C. & Lauterbur, P. C., 1993, Proceedings of the Annual Conference on Engineering in Medicine and Biology. pt 1 ed. Publ by IEEE, Vol. 15. p. 174-175 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Microsensors
Nuclear magnetic resonance spectroscopy
Nuclear magnetic resonance
1 Citation (Scopus)

System-level considerations for OEIC photoreceiver design

Morikuni, J. J., Tong, M., Ketterson, A. A., Nummila, K., Kang, S. M. & Adesida, I., 1993, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Publ by IEEE, p. 213-214 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated optoelectronics
Field effect transistors
Optical interconnects
High electron mobility transistors
Transistors
1992
2 Citations (Scopus)

High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs

Laskar, J., Maranowski, S., Kruse, J., Ketterson, A., Adesida, I., Feng, M. & Kolodzey, J., 1992, Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE, p. 445-454 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Cryogenics
Electrons
Cutoff frequency
High electron mobility transistors

Processing of InP and related compounds at nanometer dimensions

Adesida, I., Chang, H., Ballegeer, D., Liu, X., Bishop, S. G., Caneau, C. & Bhat, R., 1992, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, Vol. 1676. p. 218-227 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wires
Reactive ion etching
quantum wires
etching
Fabrication
1990
6 Citations (Scopus)

Etching of InP in methane-based plasmas

Adesida, I., Andideh, E., Jones, C. & Finnegan, N., 1990, Second International Conference on Indium Phosphide and Related Materials. Publ by IEEE, p. 405-408 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Etching
Methane
Plasmas
Masks
Polymers
1984
19 Citations (Scopus)

EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

Li, J. Z., Wolf, E. D. & Adesida, I., Jan 1984, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1 ed. Vol. 3. p. 406-409 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Etching
Reactive ion etching
Argon
Aspect ratio
Gases
14 Citations (Scopus)

ION BEAM LITHOGRAPHY AT NANOMETER DIMENSIONS.

Adesida, I., Kratschmer, E., Wolf, E. D., Muray, A. & Isaacson, M., Jan 1984, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1 ed. Vol. 3. p. 45-49 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion beam lithography
Scattering
Polymethyl methacrylates
Masks
Atoms
59 Citations (Scopus)

RADIOLYSIS AND RESOLUTION LIMITS OF INORGANIC HALIDE RESISTS.

Muray, A., Isaacson, M., Adesida, I. & Scheinfein, M., Jan 1984, Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1 ed. Vol. 3. p. 367-372 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metal halides
Radiolysis
Electron energy loss spectroscopy
Reactive ion etching
Metal ions
1983

DRY ETCHING OF MATERIALS USED IN VLSI CIRCUITS.

Wolf, E. D., Adesida, I., Chinn, J. D., Zhang, M. & Li, J. Z., 1983, Unknown Host Publication Title. Academic Press, p. 415-420 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dry etching
VLSI circuits
Refractory metals
Ion beams
Etching

MASKED ION BEAM LITHOGRAPHY FOR SUBMICRON-GATE GaAs FET FABRICATION.

Zhang, M., Adesida, I., Tiberio, R. & Wolf, E. D., 1983, Unknown Host Publication Title. Academic Press, p. 157-164 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion beam lithography
Field effect transistors
Photolithography
Lithography
Masks

VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY.

Adesida, I., Muray, A., Isaacson, M. & Wolf, E. D., 1983, Unknown Host Publication Title. Academic Press, p. 151-156 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ion beam lithography
Masks
Protons