Ilesanmi Adesida, PhD

Provost

  • 10320 Citations
  • 53 h-Index
1978 …2016
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Research Output 1978 2016

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Article
2016
13 Citations (Scopus)

Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Song, Y., Mohseni, P. K., Kim, S. H., Shin, J. C., Ishihara, T., Adesida, I. & Li, X., Aug 1 2016, In : IEEE Electron Device Letters. 37, 8, p. 970-973 4 p., 7485851.

Research output: Contribution to journalArticle

Wet etching
Aspect ratio
Indium phosphide
Dry etching
Gate dielectrics
2014
12 Citations (Scopus)

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Ofuonye, B., Lee, J., Yan, M., Sun, C., Zuo, J. M. & Adesida, I., Sep 1 2014, In : Semiconductor Science and Technology. 29, 9, 095005.

Research output: Contribution to journalArticle

Heterojunctions
electric contacts
electrical properties
Annealing
annealing
2011
1 Citation (Scopus)

Elevated-temperature annealing effects on AlGaN/GaN heterostructures

Ofuonye, B., Lee, J., Yan, M., Fareed, Q., Ahmad, I., Khan, A. & Adesida, I., Dec 2011, In : Journal of Electronic Materials. 40, 12, p. 2344-2347 4 p.

Research output: Contribution to journalArticle

Heterojunctions
Annealing
annealing
Substrates
Temperature
9 Citations (Scopus)

Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Lee, J., Yan, M., Ofuonye, B., Jang, J., Gao, X., Guo, S. & Adesida, I., Jul 2011, In : Physica Status Solidi (A) Applications and Materials Science. 208, 7, p. 1538-1540 3 p.

Research output: Contribution to journalArticle

Ohmic contacts
low resistance
Metallizing
Heterojunctions
electric contacts
2010
10 Citations (Scopus)

Breakdown voltage enhancement of AlGaN/GaN high-electron-mobility transistors via selective-area growth for ohmic contacts over ion implantation

Pang, L., Seo, H. C., Chapman, P., Adesida, I. & Kim, K., May 2010, In : Journal of Electronic Materials. 39, 5, p. 499-503 5 p.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults
7 Citations (Scopus)
photographic developers
Hydrogen
Electron beams
electron beams
hydrogen
9 Citations (Scopus)

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate

Park, S. Y., Di Giacomo, S. J., Anisha, R., Berger, P. R., Thompson, P. E. & Adesida, I., 2010, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28, 4, p. 763-768 6 p.

Research output: Contribution to journalArticle

Dry etching
high aspect ratio
Nanowires
Aspect ratio
nanowires
13 Citations (Scopus)

Parasitic capacitance effect on programming performance of phase change random access memory devices

Yeo, E. G., Shi, L. P., Zhao, R., Lim, K. G., Chong, T. C. & Adesida, I., 2010, In : Applied Physics Letters. 96, 4, 043506.

Research output: Contribution to journalArticle

random access memory
programming
capacitance
crystallization
low voltage

Transient phase change analysis of scaling in phase change devices

Yeo, E. G., Shi, L., Zhao, R., Chong, C. T. & Adesida, I., Aug 2010, In : International Journal of Nanoscience. 9, 4, p. 351-354 4 p.

Research output: Contribution to journalArticle

scaling
Data storage equipment
Equipment and Supplies
Phase change memory
Crystallization kinetics
2009
15 Citations (Scopus)
fluorine
annealing
secondary ion mass spectrometry
electron gas
bombardment
26 Citations (Scopus)

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Wang, L., Kim, D. H. & Adesida, I., 2009, In : Applied Physics Letters. 95, 17, 172107.

Research output: Contribution to journalArticle

recesses
electric contacts
etching
mesas
electron gas
1 Citation (Scopus)

Investigation of surface roughness of poly(methylmethacrylate) developed at reduced temperatures

Yan, M., Choi, S., Lee, J., Subramanian, K. R. V. & Adesida, I., 2009, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 6, p. 3010-3013 4 p.

Research output: Contribution to journalArticle

surface roughness
Surface roughness
photographic developers
molecular weight
roughness
10 Citations (Scopus)

Recessed 70-nm gate-length AlGaN/GaN HEMTs fabricated using an Al2O3/SiNχ dielectric layer

Kim, D., Kumar, V., Lee, J., Yan, M., Dabiran, A. M., Wowchak, A. M., Chow, P. P. & Adesida, I., 2009, In : IEEE Electron Device Letters. 30, 9, p. 913-915 3 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Drain current
Cutoff frequency
Molecular beam epitaxy
Masks
5 Citations (Scopus)

Transient phase change effect during the crystallization process in phase change memory devices

Yeo, E. G., Zhao, R., Shi, L. P., Lim, K. G., Chong, T. C. & Adesida, I., 2009, In : Applied Physics Letters. 94, 24, 243504.

Research output: Contribution to journalArticle

crystallization
time lag
recovery
low resistance
high resistance
9 Citations (Scopus)

Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal-semiconductor hybrid structures

Newaz, A. K. M., Wang, Y., Wu, J., Solin, S. A., Kavasseri, V. R., Ahmad, I. S. & Adesida, I., May 1 2009, In : Physical Review B - Condensed Matter and Materials Physics. 79, 19, 195308.

Research output: Contribution to journalArticle

hybrid structures
Metals
Semiconductor materials
Electric fields
metals
8 Citations (Scopus)
Raman spectroscopy
Nanostructures
Gold
gold
Hydrogen
12 Citations (Scopus)

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Choi, S., Yan, M., Wang, L. & Adesida, I., Apr 2009, In : Microelectronic Engineering. 86, 4-6, p. 521-523 3 p.

Research output: Contribution to journalArticle

Silicon nitride
silicon nitrides
Hydrogen
gratings
membranes
2008
25 Citations (Scopus)

0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

Kumar, V., Kim, D. H., Basu, A. & Adesida, I., Jan 2008, In : IEEE Electron Device Letters. 29, 1, p. 18-20 3 p.

Research output: Contribution to journalArticle

Ohmic contacts
High electron mobility transistors
Drain current
Cutoff frequency
Transconductance
28 Citations (Scopus)
densification
curing
Densification
Curing
Electron beams
34 Citations (Scopus)

Deep level characteristics in n-GaN with inductively coupled plasma damage

Cho, H. K., Khan, F. A., Adesida, I., Fang, Z. Q. & Look, D. C., Aug 7 2008, In : Journal of Physics D: Applied Physics. 41, 15, 155314.

Research output: Contribution to journalArticle

Inductively coupled plasma
Etching
Bias voltage
damage
etching
12 Citations (Scopus)

Extraordinary electroconductance in metal-semiconductor hybrid structures

Wang, Y., Newaz, A. K. M., Wu, J., Solin, S. A., Kavasseri, V. R., Jin, N., Ahmed, I. S. & Adesida, I., 2008, In : Applied Physics Letters. 92, 26, 262106.

Research output: Contribution to journalArticle

hybrid structures
shunts
field effect transistors
JFET
thermionic emission
20 Citations (Scopus)

Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Choi, S., Yan, M. & Adesida, I., 2008, In : Applied Physics Letters. 93, 16, 163113.

Research output: Contribution to journalArticle

fabrication
hydrogen
high aspect ratio
drying
flexibility
61 Citations (Scopus)

Formation mechanism of Ohmic contacts on AlGaNGaN heterostructure: Electrical and microstructural characterizations

Wang, L., Mohammed, F. M. & Adesida, I., 2008, In : Journal of Applied Physics. 103, 9, 093516.

Research output: Contribution to journalArticle

electric contacts
intermetallics
electron gas
degradation
annealing
11 Citations (Scopus)

On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm

Memis, O. G., Katsnelson, A., Mohseni, H., Yan, M., Zhang, S., Hossain, T., Jin, N. & Adesida, I., Aug 2008, In : IEEE Electron Device Letters. 29, 8, p. 867-869 3 p.

Research output: Contribution to journalArticle

Jitter
Photons
Detectors
Temperature
Transient analysis
7 Citations (Scopus)

Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor

Jhin, J., Kang, H., Byun, D., Kim, D. & Adesida, I., Jul 31 2008, In : Thin Solid Films. 516, 18, p. 6483-6486 4 p.

Research output: Contribution to journalArticle

Reactive sputtering
High electron mobility transistors
Leakage currents
field effect transistors
sputtering
17 Citations (Scopus)

Self-aligned AlGaN/GaN high electron mobility transistors with 0.18m gate-length

Kumar, V., Basu, A., Kim, D. H. & Adesida, I., 2008, In : Electronics Letters. 44, 22, p. 1323-1325 3 p.

Research output: Contribution to journalArticle

Gates (transistor)
Ohmic contacts
High electron mobility transistors
Drain current
Cutoff frequency
4 Citations (Scopus)

Short-channel AlGaN/GaN field-plated high-electron-mobility transistors for X-band high power operation

Lee, J. W., Kuliev, A. S. & Adesida, I., Mar 14 2008, In : Japanese Journal of Applied Physics. 47, 3 PART 1, p. 1479-1483 5 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
superhigh frequencies
Electric breakdown
electrical faults
30 Citations (Scopus)

Sub-Poissonian shot noise of a high internal gain injection photon detector

Memis, O. G., Katsnelson, A., Kong, S. C., Mohseni, H., Yan, M., Zhang, S., Hossain, T., Jin, N. & Adesida, I., Aug 18 2008, In : Optics Express. 16, 17, p. 12701-12706 6 p.

Research output: Contribution to journalArticle

shot noise
injection
detectors
photons
illumination
31 Citations (Scopus)
isopropyl alcohol
molecular weight
Molecular weight
photographic developers
ketones
17 Citations (Scopus)

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Wang, L., Adesida, I., Dabiran, A. M., Wowchak, A. M. & Chow, P. P., 2008, In : Applied Physics Letters. 93, 3, 032109.

Research output: Contribution to journalArticle

high electron mobility transistors
electric contacts
plugs
contact resistance
spikes
2007
23 Citations (Scopus)

ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC

Kim, D. H., Kumar, V., Chen, G., Dabiran, A. M., Wowchak, A. M., Osinsky, A. & Adesida, I., 2007, In : Electronics Letters. 43, 2, p. 127-128 2 p.

Research output: Contribution to journalArticle

Cutoff frequency
High electron mobility transistors
Passivation
Molecular beam epitaxy
31 Citations (Scopus)

Anatomy-performance correlation in Ti-based contact metallizations on AlGaNGaN heterostructures

Mohammed, F. M., Wang, L., Koo, H. J. & Adesida, I., 2007, In : Journal of Applied Physics. 101, 3, 033708.

Research output: Contribution to journalArticle

anatomy
electric contacts
metals
barrier layers
low resistance
10 Citations (Scopus)

Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power

Bae, J. W., Jeong, C. H., Lim, J. T., Lee, H. C., Yeom, G. Y. & Adesida, I., Apr 2007, In : Journal of the Korean Physical Society. 50, 4, p. 1130-1135 6 p.

Research output: Contribution to journalArticle

etching
chemistry
passivity
profiles
gases
33 Citations (Scopus)

A photon detector with very high gain at low bias and at room temperature

Memis, O. G., Katsnelson, A., Kong, S. C., Mohseni, H., Yan, M., Zhang, S., Hossain, T., Jin, N. & Adesida, I., 2007, In : Applied Physics Letters. 91, 17, 171112.

Research output: Contribution to journalArticle

dark current
high gain
detectors
photons
room temperature
1 Citation (Scopus)

Comparative studies on low-resistance Pd-based ohmic contacts on p-GaAsSb

Jang, J. H., Cho, H. K., Bae, J. W., Adesida, I. & Pan, N., 2007, In : Journal of the Electrochemical Society. 154, 5

Research output: Contribution to journalArticle

Ohmic contacts
low resistance
Metallizing
electric contacts
Semiconductor junctions
77 Citations (Scopus)
electric contacts
reaction kinetics
barrier layers
spikes
metals
20 Citations (Scopus)
photographic developers
Nanowires
Electron beams
nanowires
electron beams
11 Citations (Scopus)
Thermal aging
Ohmic contacts
High electron mobility transistors
Contact resistance
Metallizing
3 Citations (Scopus)

Micro-racetrack notch filters based on InGaAsP/InP high mesa optical waveguides

Choi, W. S., Zhao, W., Bae, J. W., Adesida, I., Yu, B. A., Lee, Y. L. & Jang, J. H., Apr 24 2007, In : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 46, 4 B, p. 2434-2439 6 p.

Research output: Contribution to journalArticle

Notch filters
mesas
Optical waveguides
notches
optical waveguides

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Jin, N., Choi, S., Wang, L., Chen, G., Kim, D., Kumar, V. & Adesida, I., 2007, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 6, p. 2081-2084 4 p.

Research output: Contribution to journalArticle

Fabrication
Hydrogen
fabrication
hydrogen
High electron mobility transistors
15 Citations (Scopus)

Ohmic contacts to n+ -GaN capped AlGaNAlNGaN high electron mobility transistors

Wang, L., Mohammed, F. M., Ofuonye, B. & Adesida, I., 2007, In : Applied Physics Letters. 91, 1, 012113.

Research output: Contribution to journalArticle

high electron mobility transistors
electric contacts
caps
linearity
transmission electron microscopy
2 Citations (Scopus)

Schottky barrier characteristics and interfacial reactions of Ti on n- In0.52 Al0.48 As

Wang, L. & Adesida, I., 2007, In : Applied Physics Letters. 91, 2, 022110.

Research output: Contribution to journalArticle

annealing
transmission electron microscopy
voids
transistors
diodes
13 Citations (Scopus)
Fluorine
fluorine
Heterojunctions
bombardment
Electric properties
2006
13 Citations (Scopus)

0.15-μm-Gate InAlAs/InGaAs/InP E-HEMTs utilizing Ir/Ti/Pt/Au gate structure

Kim, S. & Adesida, I., Nov 2006, In : IEEE Electron Device Letters. 27, 11, p. 873-876 4 p.

Research output: Contribution to journalArticle

Gates (transistor)
High electron mobility transistors
Annealing
Cutoff frequency
Metallizing
54 Citations (Scopus)

A low gate bias model extraction technique for AlGaN/GaN HEMTs

Chen, G., Kumar, V., Schwindt, R. S. & Adesida, I., Jul 2006, In : IEEE Transactions on Microwave Theory and Techniques. 54, 7, p. 2949-2952 4 p., 1650433.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
equivalent circuits
inductance
Equivalent circuits

Analytical XTEM study of Ir/InAlAs interfacial reaction for InP-based high electron mobility transistors (HEMTs) gate technology

Wang, L., Zhao, W. & Adesida, I., Aug 2006, In : Microscopy and Microanalysis. 12, SUPPL. 2, p. 718-719 2 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Surface chemistry
high electron mobility transistors
1 Citation (Scopus)
Ohmic contacts
High electron mobility transistors
high electron mobility transistors
electric contacts
Auger electron spectroscopy
6 Citations (Scopus)

A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

Chen, G., Kumar, V., Schwindt, R. & Adesida, I., 2006, In : IEEE MTT-S International Microwave Symposium Digest. p. 1097-1100 4 p., 4015111.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Inductance
Electric potential
inductance
80 Citations (Scopus)

Bendable GaN high electron mobility transistors on plastic substrates

Lee, K. J., Meitl, M. A., Ahn, J. H., Rogers, J. A., Nuzzo, R. G., Kumar, V. & Adesida, I., 2006, In : Journal of Applied Physics. 100, 12, 124507.

Research output: Contribution to journalArticle

high electron mobility transistors
plastics
inks
transconductance
printing
109 Citations (Scopus)

Buckled and wavy ribbons of GaAs for high-performance electronics on elastomeric substrates

Sun, Y., Kumar, V., Adesida, I. & Rogers, J. A., Nov 3 2006, In : Advanced Materials. 18, 21, p. 2857-2862 6 p.

Research output: Contribution to journalArticle

Electronic equipment
Polydimethylsiloxane
Formability
Substrates
MESFET devices