Ilesanmi Adesida, PhD


  • 10537 Citations
  • 54 h-Index
1978 …2016
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Research Output 1978 2016

7 Citations (Scopus)

Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

Schwindt, R. S., Kumar, V., Kuliev, A., Simin, G., Yang, J. W., Khan, M. A., Muir, M. E. & Adesida, I., Mar 2003, In : IEEE Microwave and Wireless Components Letters. 13, 3, p. 93-95 3 p.

Research output: Contribution to journalLetter

High electron mobility transistors
high electron mobility transistors
Millimeter waves
millimeter waves
power efficiency