Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 2484-2487 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 55 |
| Issue number | 10 |
| Publication status | Published - Oct 1 2013 |
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0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects. / Nguyen, Nga T. H.; Ukaegbu, Ikechi Augustine; Sangirov, Jamshid; Cho, Mu-Hee; Lee, Tae-Woo; Park, Hyo-Hoon.
In: Microwave and Optical Technology Letters, Vol. 55, No. 10, 01.10.2013, p. 2484-2487.Research output: Contribution to journal › Article
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TY - JOUR
T1 - 0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects
AU - Nguyen, Nga T. H.
AU - Ukaegbu, Ikechi Augustine
AU - Sangirov, Jamshid
AU - Cho, Mu-Hee
AU - Lee, Tae-Woo
AU - Park, Hyo-Hoon
PY - 2013/10/1
Y1 - 2013/10/1
N2 - A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.
AB - A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.
M3 - Article
VL - 55
SP - 2484
EP - 2487
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
SN - 0895-2477
IS - 10
ER -