0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects

Nga T. H. Nguyen; Ikechi Augustine Ukaegbu; Jamshid Sangirov; Mu-Hee Cho; Tae-Woo Lee; Hyo-Hoon Park

0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects

Nga T. H. Nguyen, Ikechi Augustine Ukaegbu, Jamshid Sangirov, Mu-Hee Cho, Tae-Woo Lee, Hyo-Hoon Park

School of Engineering and Digital Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.

Original language	English
Pages (from-to)	2484-2487
Journal	Microwave and Optical Technology Letters
Volume	55
Issue number	10
Publication status	Published - Oct 1 2013

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title = "0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects",

abstract = "A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.",

author = "Nguyen, {Nga T. H.} and Ukaegbu, {Ikechi Augustine} and Jamshid Sangirov and Mu-Hee Cho and Tae-Woo Lee and Hyo-Hoon Park",

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T1 - 0.013 mm2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects

AU - Nguyen, Nga T. H.

AU - Ukaegbu, Ikechi Augustine

AU - Sangirov, Jamshid

AU - Cho, Mu-Hee

AU - Lee, Tae-Woo

AU - Park, Hyo-Hoon

PY - 2013/10/1

Y1 - 2013/10/1

N2 - A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.

AB - A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz.

M3 - Article

VL - 55

SP - 2484

EP - 2487

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

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