0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

D. C. Dumka, G. Cueva, W. E. Hoke, P. J. Lemonias, I. Adesida

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.

Original languageEnglish
Pages (from-to)83-84
Number of pages2
JournalAnnual Device Research Conference Digest
Publication statusPublished - 2000
Externally publishedYes

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Gates (transistor)
Cutoff frequency
High electron mobility transistors
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate. / Dumka, D. C.; Cueva, G.; Hoke, W. E.; Lemonias, P. J.; Adesida, I.

In: Annual Device Research Conference Digest, 2000, p. 83-84.

Research output: Contribution to journalArticle

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AU - Cueva, G.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Adesida, I.

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