0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

D. C. Dumka, G. Cueva, W. E. Hoke, P. J. Lemonias, I. Adesida

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

Several 0.13 μm gate-length InAlAs/InGaAs MM-HEMTs were fabricated on GaAs substrate. DC and RF performance of the devices were measured. The resultant devices exhibit a record unity current gain cut-off frequency of 235 GHz.

Original languageEnglish
Pages83-84
Number of pages2
Publication statusPublished - Jan 1 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Conference

Conference58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

ASJC Scopus subject areas

  • Engineering(all)

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    Dumka, D. C., Cueva, G., Hoke, W. E., Lemonias, P. J., & Adesida, I. (2000). 0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate. 83-84. Paper presented at 58th Device Research Conference (58th DRC), Denver, CO, USA, .