0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

D. C. Dumka, G. Cueva, W. E. Hoke, P. J. Lemonias, I. Adesida

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

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Engineering & Materials Science