0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length

A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. M. Dabiran, P. Chow, I. Adesida

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The effect of gate-recess length on DC and RF performance of AlGaN/GaN gate-recessed high electron mobility transistors (HEMTs) was studied. 0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate-recess length from 0.5 to 1.0 μ m were fabricated. DC and microwave performance did not exhibit significant dependence on the gate-recess length. The devices showed a maximum drain current density as high as 1.1 A/mm, a unity gain cutoff frequency of 79 GHz, and a maximum frequency of oscillation of 125 GHz. The measured series source resistances were essentially identical for all devices. Therefore, all the gate-recessed HEMTs exhibited similar DC and RF performance. This conclusion is derived from the fact that the values of ohmic contact resistances dominated over the values of channel resistances. The nature of the breakdown in the HEMTs was also studied. The results of temperature-dependent breakdown voltage measurements suggest that the breakdown mechanism was mainly due to tunneling gate leakage currents via shallow traps.

Original languageEnglish
Pages (from-to)117-122
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number1
DOIs
Publication statusPublished - Jan 2003
Externally publishedYes

Fingerprint

recesses
High electron mobility transistors
high electron mobility transistors
breakdown
direct current
Ohmic contacts
Drain current
Voltage measurement
Cutoff frequency
Contact resistance
Electric breakdown
Leakage currents
Current density
Microwaves
aluminum gallium nitride
contact resistance
electrical measurement
unity
leakage
cut-off

Keywords

  • AlGaN
  • GaN
  • Gate recess
  • High electron mobility transistors
  • Trap-assisted tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kuliev, A., Kumar, V., Schwindt, R., Selvanathan, D., Dabiran, A. M., Chow, P., & Adesida, I. (2003). 0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length. Solid-State Electronics, 47(1), 117-122. https://doi.org/10.1016/S0038-1101(02)00258-7

0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length. / Kuliev, A.; Kumar, V.; Schwindt, R.; Selvanathan, D.; Dabiran, A. M.; Chow, P.; Adesida, I.

In: Solid-State Electronics, Vol. 47, No. 1, 01.2003, p. 117-122.

Research output: Contribution to journalArticle

Kuliev, A, Kumar, V, Schwindt, R, Selvanathan, D, Dabiran, AM, Chow, P & Adesida, I 2003, '0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length', Solid-State Electronics, vol. 47, no. 1, pp. 117-122. https://doi.org/10.1016/S0038-1101(02)00258-7
Kuliev A, Kumar V, Schwindt R, Selvanathan D, Dabiran AM, Chow P et al. 0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length. Solid-State Electronics. 2003 Jan;47(1):117-122. https://doi.org/10.1016/S0038-1101(02)00258-7
Kuliev, A. ; Kumar, V. ; Schwindt, R. ; Selvanathan, D. ; Dabiran, A. M. ; Chow, P. ; Adesida, I. / 0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length. In: Solid-State Electronics. 2003 ; Vol. 47, No. 1. pp. 117-122.
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