0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, H. Morkoc

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMicroelectronic Engineering
Volume11
Issue number1-4
DOIs
Publication statusPublished - 1990
Externally publishedYes

Fingerprint

High electron mobility transistors
unity
depletion
cut-off
Cutoff frequency
Heterojunctions

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Adesida, I., Ketterson, A., Laskar, J., Agarwala, S., Brock, T., Kolodzey, J., & Morkoc, H. (1990). 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz. Microelectronic Engineering, 11(1-4), 69-72. https://doi.org/10.1016/0167-9317(90)90075-5

0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz. / Adesida, I.; Ketterson, A.; Laskar, J.; Agarwala, S.; Brock, T.; Kolodzey, J.; Morkoc, H.

In: Microelectronic Engineering, Vol. 11, No. 1-4, 1990, p. 69-72.

Research output: Contribution to journalArticle

Adesida, I, Ketterson, A, Laskar, J, Agarwala, S, Brock, T, Kolodzey, J & Morkoc, H 1990, '0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz', Microelectronic Engineering, vol. 11, no. 1-4, pp. 69-72. https://doi.org/10.1016/0167-9317(90)90075-5
Adesida, I. ; Ketterson, A. ; Laskar, J. ; Agarwala, S. ; Brock, T. ; Kolodzey, J. ; Morkoc, H. / 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz. In: Microelectronic Engineering. 1990 ; Vol. 11, No. 1-4. pp. 69-72.
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T1 - 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

AU - Adesida, I.

AU - Ketterson, A.

AU - Laskar, J.

AU - Agarwala, S.

AU - Brock, T.

AU - Kolodzey, J.

AU - Morkoc, H.

PY - 1990

Y1 - 1990

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AB - 0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.

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