0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, H. Morkoc

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMicroelectronic Engineering
Volume11
Issue number1-4
DOIs
Publication statusPublished - Apr 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Adesida, I., Ketterson, A., Laskar, J., Agarwala, S., Brock, T., Kolodzey, J., & Morkoc, H. (1990). 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz. Microelectronic Engineering, 11(1-4), 69-72. https://doi.org/10.1016/0167-9317(90)90075-5