0.2 μm T-gate MODFETs have been fabricated and characterized in a planar-doped, lattice-matched InAlAs/InGaAs/InP heterostructure. Extrinsic dc tranconductance as high as 704 mS/mm with very good pinch-off characteristics have been obtained in these depletion-mode devices. A unity current gain cut-off frequency, fT, of 170 GHz is reported for 100 μm-wide MODFETs. This is the highest fT ever reported for MODFETs with this gate length in any material system.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering