0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz

I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, H. Morkoc

Research output: Contribution to journalArticle

4 Citations (Scopus)

Fingerprint Dive into the research topics of '0.2 μm T-gate InAlAs/InGaAs MODFET with F<sub>T</sub> = 170 GHz'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy