0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

M. Tong, A. Ketterson, K. Nummila, I. Adesida, L. Aina, M. Mattingly

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Modulation-doped field effect transistors (MODFETs) with 0.23 μm gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency ft of over 120 GHz at room temperature have been achieved. These gm and ft values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Original languageEnglish
Pages (from-to)1426-1427
Number of pages2
JournalElectronics Letters
Volume27
Issue number16
Publication statusPublished - Aug 1 1991
Externally publishedYes

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Metallorganic vapor phase epitaxy
High electron mobility transistors
Heterojunctions
Vapor phase epitaxy
Metallorganic chemical vapor deposition
Cutoff frequency
Transconductance
Molecular beam epitaxy
Metals
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tong, M., Ketterson, A., Nummila, K., Adesida, I., Aina, L., & Mattingly, M. (1991). 0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE. Electronics Letters, 27(16), 1426-1427.

0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE. / Tong, M.; Ketterson, A.; Nummila, K.; Adesida, I.; Aina, L.; Mattingly, M.

In: Electronics Letters, Vol. 27, No. 16, 01.08.1991, p. 1426-1427.

Research output: Contribution to journalArticle

Tong, M, Ketterson, A, Nummila, K, Adesida, I, Aina, L & Mattingly, M 1991, '0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE', Electronics Letters, vol. 27, no. 16, pp. 1426-1427.
Tong M, Ketterson A, Nummila K, Adesida I, Aina L, Mattingly M. 0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE. Electronics Letters. 1991 Aug 1;27(16):1426-1427.
Tong, M. ; Ketterson, A. ; Nummila, K. ; Adesida, I. ; Aina, L. ; Mattingly, M. / 0.23 μm Gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE. In: Electronics Letters. 1991 ; Vol. 27, No. 16. pp. 1426-1427.
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