0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

V. Kumar, W. Lu, R. Schwindt, J. Van Hove, P. Chow, I. Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

MBE-grown AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire substrates have been fabricated. These 0.25 μm gate-length devices exhibited a maximum drain current density as high as 1.39 A/mm, a unity gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 136 GHz. The fT of 67 GHz and fmax of 136 GHz are the highest reported values for 0.25 μm gate-length GaN-based HEMTs.

Original languageEnglish
Pages (from-to)858-859
Number of pages2
JournalElectronics Letters
Volume37
Issue number13
DOIs
Publication statusPublished - Jun 21 2001
Externally publishedYes

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High electron mobility transistors
Molecular beam epitaxy
Drain current
Cutoff frequency
Sapphire
Current density
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT. / Kumar, V.; Lu, W.; Schwindt, R.; Van Hove, J.; Chow, P.; Adesida, I.

In: Electronics Letters, Vol. 37, No. 13, 21.06.2001, p. 858-859.

Research output: Contribution to journalArticle

Kumar, V. ; Lu, W. ; Schwindt, R. ; Van Hove, J. ; Chow, P. ; Adesida, I. / 0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT. In: Electronics Letters. 2001 ; Vol. 37, No. 13. pp. 858-859.
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AU - Lu, W.

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AU - Van Hove, J.

AU - Chow, P.

AU - Adesida, I.

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