0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

Vipan Kumar, D. H. Kim, A. Basu, I. Adesida

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Self-aligned AlGaN/GaN high electron mobility transistors grown on semiinsulating SiC substrates with a 0.25 μm gate-length were fabricated using a single-step ohmic process. Our recently developed Mo/ Al/Mo/Au-based ohmic contact requiring annealing temperatures between 500 °C and 600 °C was utilized. Ohmic contact resistances between 0.35-0.6 Ω · mm were achieved. These 0.25 μm gate-length devices exhibited drain current density as high as 1.05 A/mm at a gate bias of 0 V and a drain bias of 10 V. A knee voltage of less than 2 V and a peak extrinsic transconductance (gm) of 321 mS/ mm were measured. For their microwave characteristics, a unity gain cutoff frequency (fm) of 82 GHz and maximum frequency of oscillation (fmax) of 103 GHz were measured.

Original languageEnglish
Pages (from-to)18-20
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number1
DOIs
Publication statusPublished - Jan 1 2008

Keywords

  • GaN
  • High electron mobility transistors (HEMTs)
  • Self-aligned
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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