0.3-μm gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor

A. Mahajan, M. Arafa, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The fabrication and performance of ultra-high-speed 0.3-μm gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the heterostructure design, submicron E-HEMT devices exhibiting both high-threshold voltages and excellent threshold-voltage uniformity have been achieved. The devices demonstrate a threshold voltage of+171 mV with a standard deviation of only 9 mV. In addition, a maximum DC extrinsic transconductance of 697 mS/mm is measured at room temperature. The output conductance is 22 mS/mm, which results in a maximum voltage gain (9m/9o) of 32. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 116 GHz and a maximum frequency of oscillation (fmax) of 229 GHz. To the best of the authors' knowledge, these are the highest reported frequencies for lattice-matched E-HEMT's on InP.

Original languageEnglish
Pages (from-to)284-286
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number6
DOIs
Publication statusPublished - Jun 1 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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