0.32 μm gate length InP-channel MODFETs with ft above 90 GHz

D. G. Ballegeer, K. Nummila, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The fabrication and characterisation of high performance InAlAs/InP modulation-doped field-effect transistors (MODFETs) with 0.32 μm gate lengths are reported. Devices have been fabricated on two different delta-doped heterostructures with one having an extra delta-doping plane just below the cap layer. The extra doping resulted in devices with lower source and drain parasitic resistances. Extrinsic DC transconductances gm as high as 805 mS/mm and unity current-gain cut-off frequency ft as high as 92 GHz obtained for these devices at a drain-to-source voltage Vds of 2 V are attributed to the low parasitics. Also, these devices exhibited an ft of at least 75 GHz up to a Vds of 4 V.

Original languageEnglish
Pages (from-to)1375-1377
Number of pages3
JournalElectronics Letters
Volume29
Issue number15
Publication statusPublished - Jan 1 1993
Externally publishedYes

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High electron mobility transistors
Doping (additives)
Cutoff frequency
Transconductance
Heterojunctions
Fabrication
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ballegeer, D. G., Nummila, K., Adesida, I., Caneau, C., & Bhat, R. (1993). 0.32 μm gate length InP-channel MODFETs with ft above 90 GHz. Electronics Letters, 29(15), 1375-1377.

0.32 μm gate length InP-channel MODFETs with ft above 90 GHz. / Ballegeer, D. G.; Nummila, K.; Adesida, I.; Caneau, C.; Bhat, R.

In: Electronics Letters, Vol. 29, No. 15, 01.01.1993, p. 1375-1377.

Research output: Contribution to journalArticle

Ballegeer, DG, Nummila, K, Adesida, I, Caneau, C & Bhat, R 1993, '0.32 μm gate length InP-channel MODFETs with ft above 90 GHz', Electronics Letters, vol. 29, no. 15, pp. 1375-1377.
Ballegeer DG, Nummila K, Adesida I, Caneau C, Bhat R. 0.32 μm gate length InP-channel MODFETs with ft above 90 GHz. Electronics Letters. 1993 Jan 1;29(15):1375-1377.
Ballegeer, D. G. ; Nummila, K. ; Adesida, I. ; Caneau, C. ; Bhat, R. / 0.32 μm gate length InP-channel MODFETs with ft above 90 GHz. In: Electronics Letters. 1993 ; Vol. 29, No. 15. pp. 1375-1377.
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