0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

L. Aina, M. Burgess, M. Mattingly, James M. O’Connor, A. Meerschaert, M. Tong, A. Ketterson, Ilesanmi Adesida

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

Original languageEnglish
Pages (from-to)483-485
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

Transconductance
High electron mobility transistors
Electric breakdown
Millimeter waves
Fabrication
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Aina, L., Burgess, M., Mattingly, M., O’Connor, J. M., Meerschaert, A., Tong, M., ... Adesida, I. (1991). 0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax. IEEE Electron Device Letters, 12(9), 483-485. https://doi.org/10.1109/55.116925

0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax. / Aina, L.; Burgess, M.; Mattingly, M.; O’Connor, James M.; Meerschaert, A.; Tong, M.; Ketterson, A.; Adesida, Ilesanmi.

In: IEEE Electron Device Letters, Vol. 12, No. 9, 1991, p. 483-485.

Research output: Contribution to journalArticle

Aina, L, Burgess, M, Mattingly, M, O’Connor, JM, Meerschaert, A, Tong, M, Ketterson, A & Adesida, I 1991, '0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax', IEEE Electron Device Letters, vol. 12, no. 9, pp. 483-485. https://doi.org/10.1109/55.116925
Aina L, Burgess M, Mattingly M, O’Connor JM, Meerschaert A, Tong M et al. 0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax. IEEE Electron Device Letters. 1991;12(9):483-485. https://doi.org/10.1109/55.116925
Aina, L. ; Burgess, M. ; Mattingly, M. ; O’Connor, James M. ; Meerschaert, A. ; Tong, M. ; Ketterson, A. ; Adesida, Ilesanmi. / 0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax. In: IEEE Electron Device Letters. 1991 ; Vol. 12, No. 9. pp. 483-485.
@article{d6193a3701f44f3f9a79e4df9b60b5e7,
title = "0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax",
abstract = "We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.",
author = "L. Aina and M. Burgess and M. Mattingly and O’Connor, {James M.} and A. Meerschaert and M. Tong and A. Ketterson and Ilesanmi Adesida",
year = "1991",
doi = "10.1109/55.116925",
language = "English",
volume = "12",
pages = "483--485",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - 0.33-μm Gate-Length Millimeter-Wave InP-Channel HEMT’s with High ft and fmax

AU - Aina, L.

AU - Burgess, M.

AU - Mattingly, M.

AU - O’Connor, James M.

AU - Meerschaert, A.

AU - Tong, M.

AU - Ketterson, A.

AU - Adesida, Ilesanmi

PY - 1991

Y1 - 1991

N2 - We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

AB - We report the fabrication of the first 0.33-μm gate-length AlInAs/InP high electron mobility transistors (HEMT’s). These InP-channel devices have ft values as high as 76 GHz, fmax values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic dc transconductances are as high as 610 mS/mm, with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8 x 107 cm/s, while the ftLg product is 29 GHz·μm. These results are the best that we are aware of for InP-channel devices and are comparable to the best reported results for similar InGaAs-channel devices.

UR - http://www.scopus.com/inward/record.url?scp=0026219763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026219763&partnerID=8YFLogxK

U2 - 10.1109/55.116925

DO - 10.1109/55.116925

M3 - Article

AN - SCOPUS:0026219763

VL - 12

SP - 483

EP - 485

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -