1 volt CMOS differential mode sense amplifier

J. Ashok Chandran; Josen George; K. R. Ajayan; A. P. James

1 volt CMOS differential mode sense amplifier

J. Ashok Chandran, Josen George, K. R. Ajayan, A. P. James

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.

Original language	English
Publication status	Published - Jan 1 2006
Event	MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS - Opatija, Croatia Duration: May 22 2006 → May 26 2006

Other

Other	MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS
Country	Croatia
City	Opatija
Period	5/22/06 → 5/26/06

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Condensed Matter Physics
Atomic and Molecular Physics, and Optics

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title = "1 volt CMOS differential mode sense amplifier",

abstract = "Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.",

author = "{Ashok Chandran}, J. and Josen George and Ajayan, {K. R.} and James, {A. P.}",

year = "2006",

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language = "English",

note = "MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS ; Conference date: 22-05-2006 Through 26-05-2006",

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AU - Ashok Chandran, J.

AU - George, Josen

AU - Ajayan, K. R.

AU - James, A. P.

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N2 - Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.

AB - Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.

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Y2 - 22 May 2006 through 26 May 2006

ER -