Abstract
Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.
Original language | English |
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Publication status | Published - Jan 1 2006 |
Event | MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS - Opatija, Croatia Duration: May 22 2006 → May 26 2006 |
Other
Other | MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS |
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Country | Croatia |
City | Opatija |
Period | 5/22/06 → 5/26/06 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics