Abstract
Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.
| Original language | English |
|---|---|
| Title of host publication | MIPRO 2006 - 29th International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS |
| Publisher | Croatian Society for Information and Communication Technology |
| Volume | 1 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS - Opatija, Croatia Duration: May 22 2006 → May 26 2006 |
Other
| Other | MIPRO 2006 - 29th International Convention: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS |
|---|---|
| Country | Croatia |
| City | Opatija |
| Period | 5/22/06 → 5/26/06 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
1 volt CMOS differential mode sense amplifier. / Ashok Chandran, J.; George, Josen; Ajayan, K. R.; James, A. P.
MIPRO 2006 - 29th International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS. Vol. 1 Croatian Society for Information and Communication Technology, 2006.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 1 volt CMOS differential mode sense amplifier
AU - Ashok Chandran, J.
AU - George, Josen
AU - Ajayan, K. R.
AU - James, A. P.
PY - 2006
Y1 - 2006
N2 - Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.
AB - Sense amplifiers are used for detecting stored bits in memory cells; they accept the voltage level from the memory cell as input and provide an output corresponding with the logic levels of the external circuit. The circuit uses a differential mode amplifier to amplify the bit line signal and provide required output. The circuit works at a supply of 1V. The simulations were conducted using the BSIM 4.4 MOSFET model. The voltage swing needed for operations is significantly lower than existing designs. It also offers superior performance in terms of power and delay.
UR - http://www.scopus.com/inward/record.url?scp=84895878426&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84895878426&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84895878426
VL - 1
BT - MIPRO 2006 - 29th International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, MEET, Hypermedia and Grid Systems HGS
PB - Croatian Society for Information and Communication Technology
ER -