The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.
- Integrated optoelectronics
- Metal-semiconductor-metal structures
- Optical receivers
ASJC Scopus subject areas
- Electrical and Electronic Engineering