15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength

P. Fay; W. Wohlmuth; I. Adesida; C. Caneau

doi:10.1049/el:19950484

15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength

P. Fay, W. Wohlmuth, I. Adesida, C. Caneau

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.

Original language	English
Pages (from-to)	755-756
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1049/el:19950484
Publication status	Published - Apr 27 1995
Externally published	Yes

Keywords

Integrated optoelectronics
Metal-semiconductor-metal structures
MODFETs
Optical receivers
Photodetectors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength",

abstract = "The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.",

keywords = "Integrated optoelectronics, Metal-semiconductor-metal structures, MODFETs, Optical receivers, Photodetectors",

author = "P. Fay and W. Wohlmuth and I. Adesida and C. Caneau",

year = "1995",

month = apr,

day = "27",

doi = "10.1049/el:19950484",

language = "English",

volume = "31",

pages = "755--756",

journal = "Electronics Letters",

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T1 - 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength

AU - Fay, P.

AU - Wohlmuth, W.

AU - Adesida, I.

AU - Caneau, C.

PY - 1995/4/27

Y1 - 1995/4/27

N2 - The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.

AB - The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.

KW - Integrated optoelectronics

KW - Metal-semiconductor-metal structures

KW - MODFETs

KW - Optical receivers

KW - Photodetectors

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DO - 10.1049/el:19950484

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 9

ER -

15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength

Abstract

Keywords

ASJC Scopus subject areas

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