15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength

P. Fay, W. Wohlmuth, I. Adesida, C. Caneau

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withlnAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25μm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72Ω. At a transimpedance of 350Ω, a very flat optical to electrical frequency response with a −3dB frequency of 10GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured −3dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55μm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10GHz.

Original languageEnglish
Pages (from-to)755-756
Number of pages2
JournalElectronics Letters
Volume31
Issue number9
DOIs
Publication statusPublished - Apr 27 1995
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • Metal-semiconductor-metal structures
  • MODFETs
  • Optical receivers
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm wavelength'. Together they form a unique fingerprint.

  • Cite this