160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor

A. Mahajan, M. Arafa, P. Fay, C. Caneau, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work demonstrates that with proper heterostructure and device design, E-HEMTs with excellent DC and RF performance can be achieved with gate lengths as small as 0.15 μm that are suitable for extremely high speed, low power circuit applications. The devices were fabricated on a heterostructure grown by OMVPE on a semi-insulating InP substrate. The buffer consists of 25 nm of Fe-doped InP followed by 50 nm of Fe-doped InAlAs and 5 nm of undoped InAlAs. For devices with 0.3 μm gate lengths, transconductances of 700 mS/mm were measured, with a maximum voltage gain (gm/go) of 32. On-wafer s-parameter measurements of these devices yield fT of 116 GHz and fmax of 229 GHz. To the authors' knowledge, these are the highest speeds of operation for enhancement-mode HEMTs. Even higher performance is obtained for 0.15 μm gate length devices, for which fT was found to be 160 GHz. This is, to the authors knowledge, the fastest E-mode InAlAs/InGaAs/InP ever reported. A design and fabrication procedure for integrated E/D mode HEMTs is presented.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages132-133
Number of pages2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

Fingerprint

High electron mobility transistors
Heterojunctions
Metallorganic vapor phase epitaxy
Transconductance
Fabrication
Networks (circuits)
Electric potential
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mahajan, A., Arafa, M., Fay, P., Caneau, C., & Adesida, I. (1996). 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. In Annual Device Research Conference Digest (pp. 132-133). IEEE.

160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. / Mahajan, A.; Arafa, M.; Fay, P.; Caneau, C.; Adesida, I.

Annual Device Research Conference Digest. IEEE, 1996. p. 132-133.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mahajan, A, Arafa, M, Fay, P, Caneau, C & Adesida, I 1996, 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. in Annual Device Research Conference Digest. IEEE, pp. 132-133, Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96.
Mahajan A, Arafa M, Fay P, Caneau C, Adesida I. 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. In Annual Device Research Conference Digest. IEEE. 1996. p. 132-133
Mahajan, A. ; Arafa, M. ; Fay, P. ; Caneau, C. ; Adesida, I. / 160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor. Annual Device Research Conference Digest. IEEE, 1996. pp. 132-133
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N2 - This work demonstrates that with proper heterostructure and device design, E-HEMTs with excellent DC and RF performance can be achieved with gate lengths as small as 0.15 μm that are suitable for extremely high speed, low power circuit applications. The devices were fabricated on a heterostructure grown by OMVPE on a semi-insulating InP substrate. The buffer consists of 25 nm of Fe-doped InP followed by 50 nm of Fe-doped InAlAs and 5 nm of undoped InAlAs. For devices with 0.3 μm gate lengths, transconductances of 700 mS/mm were measured, with a maximum voltage gain (gm/go) of 32. On-wafer s-parameter measurements of these devices yield fT of 116 GHz and fmax of 229 GHz. To the authors' knowledge, these are the highest speeds of operation for enhancement-mode HEMTs. Even higher performance is obtained for 0.15 μm gate length devices, for which fT was found to be 160 GHz. This is, to the authors knowledge, the fastest E-mode InAlAs/InGaAs/InP ever reported. A design and fabrication procedure for integrated E/D mode HEMTs is presented.

AB - This work demonstrates that with proper heterostructure and device design, E-HEMTs with excellent DC and RF performance can be achieved with gate lengths as small as 0.15 μm that are suitable for extremely high speed, low power circuit applications. The devices were fabricated on a heterostructure grown by OMVPE on a semi-insulating InP substrate. The buffer consists of 25 nm of Fe-doped InP followed by 50 nm of Fe-doped InAlAs and 5 nm of undoped InAlAs. For devices with 0.3 μm gate lengths, transconductances of 700 mS/mm were measured, with a maximum voltage gain (gm/go) of 32. On-wafer s-parameter measurements of these devices yield fT of 116 GHz and fmax of 229 GHz. To the authors' knowledge, these are the highest speeds of operation for enhancement-mode HEMTs. Even higher performance is obtained for 0.15 μm gate length devices, for which fT was found to be 160 GHz. This is, to the authors knowledge, the fastest E-mode InAlAs/InGaAs/InP ever reported. A design and fabrication procedure for integrated E/D mode HEMTs is presented.

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