60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

O. Aktas, A. Kuliev, V. Kumar, R. Schwindt, S. Toshkov, D. Costescu, J. Stubbins, I. Adesida

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated. Passivated AlGaN/GaN HEMTs were exposed to a maximum total dose of 600 Mrad using a 60Co source under nitrogen ambient. The magnitude of the changes in the DC characteristics exhibited a monotonic increase with increasing radiation dose. At 600 Mrad dose, -0.1 V shift in threshold voltage and 3% increase in maximum transconductance was observed. High-frequency small-signal characteristics did not exhibit a significant change. Pulsed current levels increased in relation to the shift in threshold voltage, indicating no radiation damage related degradation in large signal transient behavior. The mobility, sheet carrier density, contact resistance, and sheet resistance of the sample did not exhibit measurable changes. The limited response of the devices to the high radiation dose indicates that the AlGaN/GaN HEMTs can have very high radiation hardness. The observed effects are consistent with radiation-induced trap creation.

Original languageEnglish
Pages (from-to)471-475
Number of pages5
JournalSolid-State Electronics
Volume48
Issue number3
DOIs
Publication statusPublished - Mar 2004
Externally publishedYes

Fingerprint

Radiation effects
radiation effects
High electron mobility transistors
high electron mobility transistors
Gamma rays
Dosimetry
direct current
gamma rays
dosage
Threshold voltage
radiation
threshold voltage
Radiation
Sheet resistance
Radiation damage
Transconductance
Contact resistance
Current voltage characteristics
Silicon nitride
shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs. / Aktas, O.; Kuliev, A.; Kumar, V.; Schwindt, R.; Toshkov, S.; Costescu, D.; Stubbins, J.; Adesida, I.

In: Solid-State Electronics, Vol. 48, No. 3, 03.2004, p. 471-475.

Research output: Contribution to journalArticle

Aktas, O, Kuliev, A, Kumar, V, Schwindt, R, Toshkov, S, Costescu, D, Stubbins, J & Adesida, I 2004, '60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs', Solid-State Electronics, vol. 48, no. 3, pp. 471-475. https://doi.org/10.1016/j.sse.2003.08.003
Aktas, O. ; Kuliev, A. ; Kumar, V. ; Schwindt, R. ; Toshkov, S. ; Costescu, D. ; Stubbins, J. ; Adesida, I. / 60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs. In: Solid-State Electronics. 2004 ; Vol. 48, No. 3. pp. 471-475.
@article{41bf94d5e9dd44b8871c1f1fdb19f60a,
title = "60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs",
abstract = "Total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated. Passivated AlGaN/GaN HEMTs were exposed to a maximum total dose of 600 Mrad using a 60Co source under nitrogen ambient. The magnitude of the changes in the DC characteristics exhibited a monotonic increase with increasing radiation dose. At 600 Mrad dose, -0.1 V shift in threshold voltage and 3{\%} increase in maximum transconductance was observed. High-frequency small-signal characteristics did not exhibit a significant change. Pulsed current levels increased in relation to the shift in threshold voltage, indicating no radiation damage related degradation in large signal transient behavior. The mobility, sheet carrier density, contact resistance, and sheet resistance of the sample did not exhibit measurable changes. The limited response of the devices to the high radiation dose indicates that the AlGaN/GaN HEMTs can have very high radiation hardness. The observed effects are consistent with radiation-induced trap creation.",
author = "O. Aktas and A. Kuliev and V. Kumar and R. Schwindt and S. Toshkov and D. Costescu and J. Stubbins and I. Adesida",
year = "2004",
month = "3",
doi = "10.1016/j.sse.2003.08.003",
language = "English",
volume = "48",
pages = "471--475",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - 60Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

AU - Aktas, O.

AU - Kuliev, A.

AU - Kumar, V.

AU - Schwindt, R.

AU - Toshkov, S.

AU - Costescu, D.

AU - Stubbins, J.

AU - Adesida, I.

PY - 2004/3

Y1 - 2004/3

N2 - Total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated. Passivated AlGaN/GaN HEMTs were exposed to a maximum total dose of 600 Mrad using a 60Co source under nitrogen ambient. The magnitude of the changes in the DC characteristics exhibited a monotonic increase with increasing radiation dose. At 600 Mrad dose, -0.1 V shift in threshold voltage and 3% increase in maximum transconductance was observed. High-frequency small-signal characteristics did not exhibit a significant change. Pulsed current levels increased in relation to the shift in threshold voltage, indicating no radiation damage related degradation in large signal transient behavior. The mobility, sheet carrier density, contact resistance, and sheet resistance of the sample did not exhibit measurable changes. The limited response of the devices to the high radiation dose indicates that the AlGaN/GaN HEMTs can have very high radiation hardness. The observed effects are consistent with radiation-induced trap creation.

AB - Total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated. Passivated AlGaN/GaN HEMTs were exposed to a maximum total dose of 600 Mrad using a 60Co source under nitrogen ambient. The magnitude of the changes in the DC characteristics exhibited a monotonic increase with increasing radiation dose. At 600 Mrad dose, -0.1 V shift in threshold voltage and 3% increase in maximum transconductance was observed. High-frequency small-signal characteristics did not exhibit a significant change. Pulsed current levels increased in relation to the shift in threshold voltage, indicating no radiation damage related degradation in large signal transient behavior. The mobility, sheet carrier density, contact resistance, and sheet resistance of the sample did not exhibit measurable changes. The limited response of the devices to the high radiation dose indicates that the AlGaN/GaN HEMTs can have very high radiation hardness. The observed effects are consistent with radiation-induced trap creation.

UR - http://www.scopus.com/inward/record.url?scp=0345329431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345329431&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2003.08.003

DO - 10.1016/j.sse.2003.08.003

M3 - Article

AN - SCOPUS:0345329431

VL - 48

SP - 471

EP - 475

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -