We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering