A 1.45-W/mm, 30-GHz InP-Channel Power HEMT

Olaleye Aina, M. Burgess, M. Mattingly, A. Meerschaert, James M. O'Connor, M. Tong, A. Ketterson, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.

Original languageEnglish
Pages (from-to)300-302
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - May 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A 1.45-W/mm, 30-GHz InP-Channel Power HEMT'. Together they form a unique fingerprint.

Cite this