Abstract
A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.
| Original language | English |
|---|---|
| Pages (from-to) | 586-588 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 17 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Arafa, M., Ismail, K., Chu, J. O., Meyerson, B. S., & Adesida, I. (1996). A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. IEEE Electron Device Letters, 17(12), 586-588. https://doi.org/10.1109/55.545779