A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

Original languageEnglish
Pages (from-to)586-588
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number12
DOIs
Publication statusPublished - Dec 1996
Externally publishedYes

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Cutoff frequency
High electron mobility transistors
Fabrication
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. / Arafa, M.; Ismail, K.; Chu, J. O.; Meyerson, B. S.; Adesida, I.

In: IEEE Electron Device Letters, Vol. 17, No. 12, 12.1996, p. 586-588.

Research output: Contribution to journalArticle

Arafa, M. ; Ismail, K. ; Chu, J. O. ; Meyerson, B. S. ; Adesida, I. / A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 12. pp. 586-588.
@article{02bb58a034b64f27b2166f48e51cc8a1,
title = "A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET",
abstract = "A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.",
author = "M. Arafa and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",
year = "1996",
month = "12",
doi = "10.1109/55.545779",
language = "English",
volume = "17",
pages = "586--588",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

AU - Arafa, M.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Adesida, I.

PY - 1996/12

Y1 - 1996/12

N2 - A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

AB - A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

UR - http://www.scopus.com/inward/record.url?scp=0030399546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030399546&partnerID=8YFLogxK

U2 - 10.1109/55.545779

DO - 10.1109/55.545779

M3 - Article

AN - SCOPUS:0030399546

VL - 17

SP - 586

EP - 588

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -