A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

M. Arafa; K. Ismail; J. O. Chu; B. S. Meyerson; I. Adesida

doi:10.1109/55.545779

A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

Original language	English
Pages (from-to)	586-588
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1109/55.545779
Publication status	Published - Dec 1 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{02bb58a034b64f27b2166f48e51cc8a1,

title = "A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET",

abstract = "A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.",

author = "M. Arafa and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",

year = "1996",

month = dec,

day = "1",

doi = "10.1109/55.545779",

language = "English",

volume = "17",

pages = "586--588",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

AU - Arafa, M.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Adesida, I.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

AB - A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

UR - http://www.scopus.com/inward/record.url?scp=0030399546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030399546&partnerID=8YFLogxK

U2 - 10.1109/55.545779

DO - 10.1109/55.545779

M3 - Article

AN - SCOPUS:0030399546

VL - 17

SP - 586

EP - 588

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -