@article{02bb58a034b64f27b2166f48e51cc8a1,
title = "A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET",
abstract = "A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.",
author = "M. Arafa and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",
note = "Funding Information: Manuscript received June 18, 1996, revised August 13, 1996 This work was supported at the University of Illinois under JSEP Grant N00014-90-J-1270 and NSF ECD 89-43166 M. Arafa and I Adesida are with the Coordinated Science LaboratoIy, Center for Compound Semiconductor Microelectronics and Department of Electrical Engineering, University of Illinois, Urbana, IL 61801 USA K Ismail is with the Department of Electronics, Faculty of Engineering, Cairo University, Giza, Egypt He is also with the IBM T. J Watson Research Center, Yorktown Heights, NY 10598 USA J 0 Chu and B S Meyerson are with the IBM T J. Watson Research Center, Yorktown Heights, NY 10598 USA Publisher Item Identifier S 0741-3106(96)08868-4",
year = "1996",
month = dec,
doi = "10.1109/55.545779",
language = "English",
volume = "17",
pages = "586--588",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}