A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journal › Article

40 Citations (Scopus)

Abstract

A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistor (MODFET's) is described. Self-aligned devices with 0.1-μm gate-length have been fabricated and characterized. A maximum de extrinsic transcnductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage. Excellent high frequency performance with a unity current-gain cutoff frequency (fT) of 70 GHz was obtained. This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

Original languageEnglish
Pages (from-to)586-588
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number12
DOIs
Publication statusPublished - Dec 1996
Externally publishedYes

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Cutoff frequency
High electron mobility transistors
Fabrication
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. / Arafa, M.; Ismail, K.; Chu, J. O.; Meyerson, B. S.; Adesida, I.

In: IEEE Electron Device Letters, Vol. 17, No. 12, 12.1996, p. 586-588.

Research output: Contribution to journal › Article

Arafa, M, Ismail, K, Chu, JO, Meyerson, BS & Adesida, I 1996, 'A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET', IEEE Electron Device Letters, vol. 17, no. 12, pp. 586-588. https://doi.org/10.1109/55.545779
Arafa M, Ismail K, Chu JO, Meyerson BS, Adesida I. A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. IEEE Electron Device Letters. 1996 Dec;17(12):586-588. https://doi.org/10.1109/55.545779
Arafa, M. ; Ismail, K. ; Chu, J. O. ; Meyerson, B. S. ; Adesida, I. / A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 12. pp. 586-588.
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