A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes

Jong Wook Seo, Andrew A. Ketterson, Daniel G. Ballegeer, Keh Yung Cheng, Ilesanmi Adesida

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.

Original languageEnglish
Pages (from-to)888-890
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number8
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

MSM (semiconductors)
Photodetectors
Tin oxides
indium oxides
Indium
tin oxides
photometers
Metals
Semiconductor materials
Electrodes
electrodes
metals
gallium arsenide
indium tin oxide
Reactive ion etching
Methane
transit time
Photodiodes
Electric breakdown
electrical faults

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes. / Seo, Jong Wook; Ketterson, Andrew A.; Ballegeer, Daniel G.; Cheng, Keh Yung; Adesida, Ilesanmi.

In: IEEE Photonics Technology Letters, Vol. 4, No. 8, 1992, p. 888-890.

Research output: Contribution to journalArticle

Seo, Jong Wook ; Ketterson, Andrew A. ; Ballegeer, Daniel G. ; Cheng, Keh Yung ; Adesida, Ilesanmi. / A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes. In: IEEE Photonics Technology Letters. 1992 ; Vol. 4, No. 8. pp. 888-890.
@article{f5ed739adba94946bde4aa929a431ee8,
title = "A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes",
abstract = "Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.",
author = "Seo, {Jong Wook} and Ketterson, {Andrew A.} and Ballegeer, {Daniel G.} and Cheng, {Keh Yung} and Ilesanmi Adesida",
year = "1992",
doi = "10.1109/68.149898",
language = "English",
volume = "4",
pages = "888--890",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes

AU - Seo, Jong Wook

AU - Ketterson, Andrew A.

AU - Ballegeer, Daniel G.

AU - Cheng, Keh Yung

AU - Adesida, Ilesanmi

PY - 1992

Y1 - 1992

N2 - Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.

AB - Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO-MSM’s is measured to be approximately 0.8 A/W, which is twice that of conventional Ti/Au-MSM’s under normal operational bias conditions at A = 850 nm. This higher responsivity is attributed to the transparency of the ITO electrodes. ITO-MSM’s exhibited a linear optical response over a wider bias range than Ti/Au-MSM’s. Also, a higher breakdown voltage was measured for ITO-MSM’s. The bandwidths of ITO and Ti/Au-MSM’s fabricated on the same semiconductor layer with 1 μm fingers and spaces were measured to be 6 and 9 GHz, respectively. The slower response of the ITO-MSM’s is due to the longer transit time of the carriers generated beneath the ITO electrodes.

UR - http://www.scopus.com/inward/record.url?scp=0026903131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026903131&partnerID=8YFLogxK

U2 - 10.1109/68.149898

DO - 10.1109/68.149898

M3 - Article

VL - 4

SP - 888

EP - 890

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 8

ER -