A comparative study of surface passivation on AlGaN/GaN HEMTs

W. Lu, V. Kumar, R. Schwindt, E. Piner, I. Adesida

Research output: Contribution to journalArticlepeer-review

107 Citations (Scopus)

Abstract

Using a Si3N4 layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 μm, the Idss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm. The fT and fMAX values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NFmin) after passivation.

Original languageEnglish
Pages (from-to)1441-1444
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number9
DOIs
Publication statusPublished - Sep 2002

Keywords

  • AlGaN
  • GaN
  • HEMT
  • Minimum noise figure
  • Passivation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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