TY - JOUR
T1 - A High-Detectivity, Fast-Response, and Radiation-Resistant TiN/CdZnTe Heterojunction Photodiode
AU - Solovan, Mykhailo M.
AU - Mostovyi, Andrii I.
AU - Parkhomenko, Hryhorii P.
AU - Kaikanov, Marat
AU - Schopp, Nora
AU - Asare, Ernest A.
AU - Kovaliuk, Taras
AU - Veřtát, Petr
AU - Ulyanytsky, Kostiantyn S.
AU - Korbutyak, Dmytro V.
AU - Brus, Viktor V.
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2023/1/18
Y1 - 2023/1/18
N2 - A novel high-performance ultraviolet–visible–near-infrared (300–820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) “window” layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 1012 proton cm−2. This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.
AB - A novel high-performance ultraviolet–visible–near-infrared (300–820 nm) heterojunction photodiode based on radiation-resistant semiconductor materials is proposed. A titanium nitride (TiN) “window” layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 1012 proton cm−2. This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments.
KW - CdZnTe
KW - detectivity
KW - photodiodes
KW - radiation resistance
KW - response time
KW - TiN
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U2 - 10.1002/adom.202202028
DO - 10.1002/adom.202202028
M3 - Article
AN - SCOPUS:85142216094
SN - 2195-1071
VL - 11
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 2
M1 - 2202028
ER -