A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver

Andrew A. Ketterson, Minh Tong, Jong Wook Seo, Kari Nummila, James J. Morikuni, Sung Mo Kang, Ilesanmi Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFET's) with ft's of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. Transimpedances between 300 and 3000 Ω are obtained by varying the controlling gate voltage of the feedback FET. A 3-dB transimpedance bandwidth of 5.6 GHz and a transimpedance-bandwidth product of 4.8 THz-Ω are measured for the amplifier. A maximum bandwidth of 4.4 GHz is deduced from optical pulse measurements limited mainly by the transit time of photogenerated carriers across the 3 μm finger spacing of the large 100 × 100 μm2 MSM.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalIEEE Photonics Technology Letters
Volume4
Issue number1
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

High electron mobility transistors
Optoelectronic devices
aluminum gallium arsenides
field effect transistors
receivers
Metals
modulation
Field effect transistors
bandwidth
Bandwidth
metals
Semiconductor materials
Feedback
amplifier design
Integrated optoelectronics
Operational amplifiers
transit time
Photodetectors
resistors
Resistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver. / Ketterson, Andrew A.; Tong, Minh; Seo, Jong Wook; Nummila, Kari; Morikuni, James J.; Kang, Sung Mo; Adesida, Ilesanmi.

In: IEEE Photonics Technology Letters, Vol. 4, No. 1, 1992, p. 73-76.

Research output: Contribution to journalArticle

Ketterson, Andrew A. ; Tong, Minh ; Seo, Jong Wook ; Nummila, Kari ; Morikuni, James J. ; Kang, Sung Mo ; Adesida, Ilesanmi. / A High-Performance AlGaAs/InGaAs/GaAs Pseudomorphic MODFET-Based Monolithic Optoelectronic Receiver. In: IEEE Photonics Technology Letters. 1992 ; Vol. 4, No. 1. pp. 73-76.
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