A high-speed integrated optoelectronic photoreceiver

J. J. Morikuni, A. A. Ketterson, M. Tong, J. W. Seo, K. Nummila, S. M. Kang, I. Adesida, K. Y. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we present a high-speed optoelectronic photoreceiver, specifically designed for use in optical interconnections. This photoreceiver is composed of an MSM (metal-semiconductor-metal) photodetector coupled with a HEMT (high electron mobility transistor) transimpedance amplifier. Through use of the lattice-mismatched materials system of AlGaAs/InGaAs/GaAs and quarter-micron gate length HEMTs, we were able to achieve speeds in excess of 4 GHz as well as transimpedance gains of over 50 dB, well matching the results of the iSMILE simulator.

Original languageEnglish
Title of host publication1992 IEEE International Symposium on Circuits and Systems, ISCAS 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1368-1371
Number of pages4
ISBN (Electronic)0780305930
DOIs
Publication statusPublished - Jan 1 1992
Event1992 IEEE International Symposium on Circuits and Systems, ISCAS 1992 - San Diego, United States
Duration: May 10 1992May 13 1992

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume3
ISSN (Print)0271-4310

Conference

Conference1992 IEEE International Symposium on Circuits and Systems, ISCAS 1992
CountryUnited States
CitySan Diego
Period5/10/925/13/92

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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