A low gate bias model extraction technique for AlGaN/GaN HEMTs

Guang Chen, Vipan Kumar, Randal S. Schwindt, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)


The small-signal equivalent circuit of AlGaN/GaN high electron-mobility transistors is discussed. A new modeling procedure is introduced in this paper that does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. Simulated results show good agreement with measurements up to 40 GHz.

Original languageEnglish
Article number1650433
Pages (from-to)2949-2952
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number7
Publication statusPublished - Jul 2006


  • Gallium-nitride (GaN) high electron-mobility transistor (HEMT)
  • Small-signal modeling

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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