Abstract
We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-m CMOS technology and occupying an area of 2.3 13.6mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-V root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3V, low power consumption of 42mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
| Original language | English |
|---|---|
| Pages (from-to) | 1 |
| Number of pages | 4 |
| Journal | IEEE Sensors Letters |
| Volume | 2 |
| Issue number | 4 |
| Publication status | Published - Dec 1 2018 |
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Ngo, T-H., Ukaegbu, I. A., Kim, M-G., & Park, H-H. (2018). A Low-Noise Image Sensor Readout Integrated Circuit with Internal Timing Generator. IEEE Sensors Letters, 2(4), 1.