We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-m CMOS technology and occupying an area of 2.3 13.6mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-V root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3V, low power consumption of 42mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
|Number of pages||4|
|Journal||IEEE Sensors Letters|
|Publication status||Published - Dec 1 2018|