A Low-Noise Image Sensor Readout Integrated Circuit with Internal Timing Generator

Trong-Hieu Ngo, Ikechi Augustine Ukaegbu, Min-Gun Kim, Hyo-Hoon Park

Research output: Contribution to journalArticle

Abstract

We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-m CMOS technology and occupying an area of 2.3 13.6mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-V root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3V, low power consumption of 42mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
Original languageEnglish
Pages (from-to)1
Number of pages4
JournalIEEE Sensors Letters
Volume2
Issue number4
Publication statusPublished - Dec 1 2018

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Image sensors
Integrated circuits
Metals
Data acquisition
Electric power utilization
Networks (circuits)
Oxide semiconductors

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A Low-Noise Image Sensor Readout Integrated Circuit with Internal Timing Generator. / Ngo, Trong-Hieu; Ukaegbu, Ikechi Augustine; Kim, Min-Gun; Park, Hyo-Hoon.

In: IEEE Sensors Letters, Vol. 2, No. 4, 01.12.2018, p. 1.

Research output: Contribution to journalArticle

Ngo, Trong-Hieu ; Ukaegbu, Ikechi Augustine ; Kim, Min-Gun ; Park, Hyo-Hoon. / A Low-Noise Image Sensor Readout Integrated Circuit with Internal Timing Generator. In: IEEE Sensors Letters. 2018 ; Vol. 2, No. 4. pp. 1.
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