A Low-Noise Image Sensor Readout Integrated Circuit with Internal Timing Generator

Trong-Hieu Ngo, Ikechi Augustine Ukaegbu, Min-Gun Kim, Hyo-Hoon Park

Research output: Contribution to journalArticle

Abstract

We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-m CMOS technology and occupying an area of 2.3 13.6mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-V root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3V, low power consumption of 42mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
Original languageEnglish
Pages (from-to)1
Number of pages4
JournalIEEE Sensors Letters
Volume2
Issue number4
Publication statusPublished - Dec 1 2018

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