A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects

Andrew A. Ketterson, Jong Wook Seo, Minh H. Tong, Kari L. Nummila, James J. Morikuni, Keh Yung Cheng, Sung Mo Kang, Ilesanmi Adesida

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The design, fabrication. and characterization of a 0.85-μm sensitive photoreceiver is described. The monolithically integrated optoelectronic receiver is based on pseudomorphic InGaAs on GaAs modulation-doped field-effect transistors (MODFET’s) and metal-semiconductor-metal (MSM) photodectectors. High-performance quarter-micrometer MODFET’s withf1’s of -∼70 GHz are utilized in a two-stage transimpedance amplifier. An asymmetric and a symmetric amplifier design are compared. The symmetric design is found to provide the desired zero dc offset voltage for a variety of supply voltages. Excess MSM-detector dark current and low-frequency internal gain are greatly reduced through the use of a silicon nitride passivation layer and/or AlGaAs cap layer. Receiver transimpedances between 100 and 5000 Ω are obtained by varying the bias on an active feedback resistor. The parasitic capacitances of this common-gate feedback FET are studied. A transimpedance amplifier bandwidth as high as 14 GHz and an overall photoreceiver bandwidth of 11 GHz are measured. These are the highest bandwidths yet reported for any monolithic OEIC receiver.

Original languageEnglish
Pages (from-to)1406-1416
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume40
Issue number8
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Integrated optoelectronics
optical interconnects
Optical interconnects
High electron mobility transistors
integrated circuits
field effect transistors
receivers
Metals
Operational amplifiers
Bandwidth
modulation
bandwidth
Metal detectors
metals
Feedback
Semiconductor detectors
amplifiers
Dark currents
Electric potential
Field effect transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Ketterson, A. A., Seo, J. W., Tong, M. H., Nummila, K. L., Morikuni, J. J., Cheng, K. Y., ... Adesida, I. (1993). A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects. IEEE Transactions on Electron Devices, 40(8), 1406-1416. https://doi.org/10.1109/16.223699

A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects. / Ketterson, Andrew A.; Seo, Jong Wook; Tong, Minh H.; Nummila, Kari L.; Morikuni, James J.; Cheng, Keh Yung; Kang, Sung Mo; Adesida, Ilesanmi.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 8, 1993, p. 1406-1416.

Research output: Contribution to journalArticle

Ketterson, AA, Seo, JW, Tong, MH, Nummila, KL, Morikuni, JJ, Cheng, KY, Kang, SM & Adesida, I 1993, 'A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects', IEEE Transactions on Electron Devices, vol. 40, no. 8, pp. 1406-1416. https://doi.org/10.1109/16.223699
Ketterson, Andrew A. ; Seo, Jong Wook ; Tong, Minh H. ; Nummila, Kari L. ; Morikuni, James J. ; Cheng, Keh Yung ; Kang, Sung Mo ; Adesida, Ilesanmi. / A MODFET-Based Optoelectronic Integrated Circuit Receiver for Optical Interconnects. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 8. pp. 1406-1416.
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