A monolithic integrated optoelectronic photoreceiver using an MSM detector

J. J. Morikuni, M. H. Tong, K. Nummila, J. W. Seo, A. A. Ketterson, S. M. Kang, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A high-speed monolithic optoelectronic photoreceiver designed specifically for optical interconnections is described. The photoreceiver uses an enhancement-depletion process rather than the conventional D-only technology, and is based on the pseudomorphic (lattice-mismatched) AlGaAs/InGaAs/GaAs materials system. An MSM (metal-semiconductor-metal) photodetector is integrated with a modulation-doped FET (MODFET) transimpedance amplifier, thus accomplishing both photodetection and preamplification, monolithically. The measured 3-dB bandwidth of the receiver ranges from 5.4 GHz at a gain of 31 dB to 2.0 GHz at 60 dB. From the measured 110-ps (FWHM) output pulse, the optical bandwidth is calculated to be 1.0 GHz.

Original languageEnglish
Title of host publication1993 IEEE International Solid-State Circuits Conference, ISSCC 1993 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages178-179
Number of pages2
ISBN (Electronic)0780309871
DOIs
Publication statusPublished - Jan 1 1993
Externally publishedYes
Event40th IEEE International Solid-State Circuits Conference, ISSCC 1993 - San Francisco, United States
Duration: Feb 24 1993Feb 26 1993

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference40th IEEE International Solid-State Circuits Conference, ISSCC 1993
CountryUnited States
CitySan Francisco
Period2/24/932/26/93

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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