A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

G. Chen, V. Kumar, R. Schwindt, I. Adesida

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.

Original languageEnglish
Article number4015111
Pages (from-to)1097-1100
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
DOIs
Publication statusPublished - Dec 1 2006
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: Jun 11 2006Jun 16 2006

Keywords

  • Equivalent circuits
  • HEMT
  • Microwave devices

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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