A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

G. Chen; V. Kumar; R. Schwindt; I. Adesida

doi:10.1109/MWSYM.2006.249954

A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

G. Chen, V. Kumar, R. Schwindt, I. Adesida

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.

Original language	English
Article number	4015111
Pages (from-to)	1097-1100
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249954
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: Jun 11 2006 → Jun 16 2006

Keywords

Equivalent circuits
HEMT
Microwave devices

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/MWSYM.2006.249954

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title = "A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs",

abstract = "A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.",

keywords = "Equivalent circuits, HEMT, Microwave devices",

author = "G. Chen and V. Kumar and R. Schwindt and I. Adesida",

year = "2006",

doi = "10.1109/MWSYM.2006.249954",

language = "English",

pages = "1097--1100",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

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TY - JOUR

T1 - A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

AU - Chen, G.

AU - Kumar, V.

AU - Schwindt, R.

AU - Adesida, I.

PY - 2006

Y1 - 2006

N2 - A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.

AB - A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.

KW - Equivalent circuits

KW - HEMT

KW - Microwave devices

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UR - http://www.scopus.com/inward/citedby.url?scp=34250336550&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2006.249954

DO - 10.1109/MWSYM.2006.249954

M3 - Conference article

AN - SCOPUS:34250336550

SN - 0149-645X

SP - 1097

EP - 1100

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

M1 - 4015111

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -

A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

Abstract

Keywords

ASJC Scopus subject areas

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