A study of on-state and off-state breakdown voltages in GaN MESFETs

A. Kuliev, C. Lee, W. Lu, E. Piner, S. R. Bahl, I. Adesida

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

We present the experimental results on the three-terminal on-state and off-state breakdown voltage studies of recessed-gate GaN MESFETs. Typical values of BVDG = 57 V and BVDS = 46 V for the off-state breakdown voltages (BV) were measured at a value of current IG = -0.05 mA/mm. On-state BV measurements were carried out at constant extracted gate current values of IG = -0.01 mA/mm and -0.05 mA/mm with the drain current being swept from ID = |IG| (off-state) to ID=5 mA/mm (on-state). The values for BVon loci at ID = |IG| (off-state) match the results for the off-state BV measurements. In addition, a collapse of the I-V curves characterized by suppressed drain currents was observed after each BV experimental run, but the original I-V curves could be recovered after exposure to light from a blue LED. We relate the collapse of the drain current to the presence of electron traps.

Original languageEnglish
Pages110-114
Number of pages5
Publication statusPublished - Dec 1 2000
EventProceedings of 2000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, United States
Duration: Aug 7 2000Aug 9 2000

Other

OtherProceedings of 2000 IEEE/Cornell Conference on High Performance Devices
CountryUnited States
CityIthaca, NY
Period8/7/008/9/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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