A thermal activation model for 1/f{hook}y noise in Si-MOSFETs

Charles Surya, Thomas Y. Hsiang

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)

Abstract

Detailed measurements of the temperature dependence of noise power spectra in a series of commercial p-channel MOSFETs are presented. It was found that both the magnitude and the functional form of the voltage noise power spectral density varied greatly in the range between 60 and 260 K. The experimental results were compared to first-principle calculations which showed that the noise was due to the capture and emission of carriers by oxide traps through thermal activation. The process caused fluctuations in both the density and the surface mobility of the channel carriers through the modulation of the surface potential and the scattering rate respectively.

Original languageEnglish
Pages (from-to)959-964
Number of pages6
JournalSolid State Electronics
Volume31
Issue number5
DOIs
Publication statusPublished - Jan 1 1988

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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