A time-of-flight mass spectrometric study of laser fluence dependencies in SnO2 ablation

Implications for pulsed laser deposited tin oxide thin films

Haiyan Fan, Wei Ho, Scott A. Reid

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on a time-of-flight mass spectrometric study of laser fluence dependencies in the 532nm ablation of SnO2 targets. At all fluences investigated, SnO and Sn2O2 are the primary neutral gas-phase species. The relative yield of neutral tin-containing species increases exponentially up to a fluence of ∼1.9×108Wcm -2, and saturates at higher fluences. The yield of metal oxide clusters (primarily Sn2O2, Sn4O4) increases in the saturated region, while the yield of bare metal species (primarily Sn, Sn2) decreases. In contrast, the peak kinetic energy of the primary neutral ablated species is insensitive to laser fluence in this range. These results support the hypothesis that the initial Sn:O stoichiometry of amorphous SnOx films grown in vacuum using pulsed laser deposition (PLD) plays an important role in the formation of α-SnO during post-deposition annealing.

Original languageEnglish
Pages (from-to)11-17
Number of pages7
JournalInternational Journal of Mass Spectrometry
Volume230
Issue number1
DOIs
Publication statusPublished - Nov 1 2003
Externally publishedYes

Fingerprint

Ablation
Tin oxides
Pulsed lasers
tin oxides
ablation
Oxide films
pulsed lasers
fluence
Metals
Vacuum deposition
Thin films
Tin
Lasers
Amorphous films
Pulsed laser deposition
thin films
Kinetic energy
Stoichiometry
Oxides
lasers

Keywords

  • Ablation
  • Laser

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy

Cite this

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title = "A time-of-flight mass spectrometric study of laser fluence dependencies in SnO2 ablation: Implications for pulsed laser deposited tin oxide thin films",
abstract = "We report on a time-of-flight mass spectrometric study of laser fluence dependencies in the 532nm ablation of SnO2 targets. At all fluences investigated, SnO and Sn2O2 are the primary neutral gas-phase species. The relative yield of neutral tin-containing species increases exponentially up to a fluence of ∼1.9×108Wcm -2, and saturates at higher fluences. The yield of metal oxide clusters (primarily Sn2O2, Sn4O4) increases in the saturated region, while the yield of bare metal species (primarily Sn, Sn2) decreases. In contrast, the peak kinetic energy of the primary neutral ablated species is insensitive to laser fluence in this range. These results support the hypothesis that the initial Sn:O stoichiometry of amorphous SnOx films grown in vacuum using pulsed laser deposition (PLD) plays an important role in the formation of α-SnO during post-deposition annealing.",
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T2 - Implications for pulsed laser deposited tin oxide thin films

AU - Fan, Haiyan

AU - Ho, Wei

AU - Reid, Scott A.

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N2 - We report on a time-of-flight mass spectrometric study of laser fluence dependencies in the 532nm ablation of SnO2 targets. At all fluences investigated, SnO and Sn2O2 are the primary neutral gas-phase species. The relative yield of neutral tin-containing species increases exponentially up to a fluence of ∼1.9×108Wcm -2, and saturates at higher fluences. The yield of metal oxide clusters (primarily Sn2O2, Sn4O4) increases in the saturated region, while the yield of bare metal species (primarily Sn, Sn2) decreases. In contrast, the peak kinetic energy of the primary neutral ablated species is insensitive to laser fluence in this range. These results support the hypothesis that the initial Sn:O stoichiometry of amorphous SnOx films grown in vacuum using pulsed laser deposition (PLD) plays an important role in the formation of α-SnO during post-deposition annealing.

AB - We report on a time-of-flight mass spectrometric study of laser fluence dependencies in the 532nm ablation of SnO2 targets. At all fluences investigated, SnO and Sn2O2 are the primary neutral gas-phase species. The relative yield of neutral tin-containing species increases exponentially up to a fluence of ∼1.9×108Wcm -2, and saturates at higher fluences. The yield of metal oxide clusters (primarily Sn2O2, Sn4O4) increases in the saturated region, while the yield of bare metal species (primarily Sn, Sn2) decreases. In contrast, the peak kinetic energy of the primary neutral ablated species is insensitive to laser fluence in this range. These results support the hypothesis that the initial Sn:O stoichiometry of amorphous SnOx films grown in vacuum using pulsed laser deposition (PLD) plays an important role in the formation of α-SnO during post-deposition annealing.

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