Abstract
The impact of CF4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaNGaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaNGaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.
| Original language | English |
|---|---|
| Article number | 033705 |
| Journal | Journal of Applied Physics |
| Volume | 105 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface : An experimental investigation. / Basu, Anirban; Adesida, Ilesanmi.
In: Journal of Applied Physics, Vol. 105, No. 3, 033705, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface
T2 - An experimental investigation
AU - Basu, Anirban
AU - Adesida, Ilesanmi
PY - 2009
Y1 - 2009
N2 - The impact of CF4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaNGaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaNGaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.
AB - The impact of CF4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaNGaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaNGaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.
UR - http://www.scopus.com/inward/record.url?scp=60449117932&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60449117932&partnerID=8YFLogxK
U2 - 10.1063/1.3074514
DO - 10.1063/1.3074514
M3 - Article
VL - 105
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
M1 - 033705
ER -