Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface: An experimental investigation

Anirban Basu; Ilesanmi Adesida

doi:10.1063/1.3074514

Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface: An experimental investigation

Anirban Basu, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The impact of CF₄ plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaNGaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaNGaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.

Original language	English
Article number	033705
Journal	Journal of Applied Physics
Volume	105
Issue number	3
DOIs	https://doi.org/10.1063/1.3074514
Publication status	Published - Feb 24 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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AB - The impact of CF4 plasma treatment on the transport properties of the two dimensional electron gas (2DEG) in AlGaNGaN heterostrustures has been studied. Systematic Hall measurements of the plasma-treated samples show a large degradation in mobility and sheet concentration, which can be partially recovered with short-duration rapid thermal annealing. Further annealing progressively degrades both mobility and sheet concentration. Secondary ion mass spectrometry of the heterostructure reveals accumulation of fluorine at the AlGaNGaN interface close to the 2DEG channel as a result of annealing. Following our systematic electrical and analytical studies of the behavior of fluorine incorporated into the heterostructure epilayer due to bombardment, a vacancy-mediated postannealing redistribution of fluorine has been proposed.

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Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface: An experimental investigation

Abstract

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