Abstract
A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.
| Original language | English |
|---|---|
| Pages (from-to) | 46-50 |
| Number of pages | 5 |
| Journal | AIP Conference Proceedings |
| Volume | 1099 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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Keywords
- Gas cluster ion beam
- Molecular dynamics
- Rf vacuum breakdown mitigation
- Surface smoothing
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Advanced surface polishing for accelerator technology using ion beams. / Insepov, Z.; Norem, J.; Hassanein, A.; Wu, A. T.
In: AIP Conference Proceedings, Vol. 1099, 2009, p. 46-50.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Advanced surface polishing for accelerator technology using ion beams
AU - Insepov, Z.
AU - Norem, J.
AU - Hassanein, A.
AU - Wu, A. T.
PY - 2009
Y1 - 2009
N2 - A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.
AB - A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.
KW - Gas cluster ion beam
KW - Molecular dynamics
KW - Rf vacuum breakdown mitigation
KW - Surface smoothing
UR - http://www.scopus.com/inward/record.url?scp=65349124720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65349124720&partnerID=8YFLogxK
U2 - 10.1063/1.3120076
DO - 10.1063/1.3120076
M3 - Article
VL - 1099
SP - 46
EP - 50
JO - AIP Conference Proceedings
JF - AIP Conference Proceedings
SN - 0094-243X
ER -