Abstract
A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.
Original language | English |
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Pages (from-to) | 46-50 |
Number of pages | 5 |
Journal | AIP Conference Proceedings |
Volume | 1099 |
DOIs | |
Publication status | Published - 2009 |
Event | 20th International Conference on the Application of Accelerators in Research and Industry, CAARI 2008 - Fort Worth, TX, United States Duration: Aug 10 2008 → Aug 15 2008 |
Keywords
- Gas cluster ion beam
- Molecular dynamics
- Rf vacuum breakdown mitigation
- Surface smoothing
ASJC Scopus subject areas
- Physics and Astronomy(all)