AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors

D. C. Dumka, G. Cueva, I. Adesida, H. S. Hier, O. A. Aina

Research output: Contribution to journalArticle

Abstract

The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs0.56Sb0.44/In0.53Ga0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.

Original languageEnglish
Pages (from-to)152-153
Number of pages2
JournalAnnual Device Research Conference Digest
Publication statusPublished - 1999
Externally publishedYes

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Field effect transistors
Molecular beam epitaxy
Current density
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors. / Dumka, D. C.; Cueva, G.; Adesida, I.; Hier, H. S.; Aina, O. A.

In: Annual Device Research Conference Digest, 1999, p. 152-153.

Research output: Contribution to journalArticle

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AU - Cueva, G.

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AU - Hier, H. S.

AU - Aina, O. A.

PY - 1999

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