AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors

D. C. Dumka, G. Cueva, I. Adesida, H. S. Hier, O. A. Aina

Research output: Contribution to conferencePaperpeer-review

Abstract

The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs0.56Sb0.44/In0.53Ga0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.

Original languageEnglish
Pages152-153
Number of pages2
Publication statusPublished - Dec 1 1999
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: Jun 28 1999Jun 30 1999

Conference

ConferenceProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period6/28/996/30/99

ASJC Scopus subject areas

  • Engineering(all)

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