AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors

D. C. Dumka; G. Cueva; I. Adesida; H. S. Hier; O. A. Aina

AlAs_0.56Sb_0.44/In_0.53Ga_0.47As doped multi-channel field effect transistors

D. C. Dumka, G. Cueva, I. Adesida, H. S. Hier, O. A. Aina

Nazarbayev University

Research output: Contribution to conference › Paper › peer-review

Abstract

The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs_0.56Sb_0.44/In_0.53Ga_0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.

Original language	English
Pages	152-153
Number of pages	2
Publication status	Published - Dec 1 1999
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999

Conference

Conference	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	6/28/99 → 6/30/99

ASJC Scopus subject areas

Engineering(all)

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title = "AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors",

abstract = "The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs0.56Sb0.44/In0.53Ga0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.",

author = "Dumka, {D. C.} and G. Cueva and I. Adesida and Hier, {H. S.} and Aina, {O. A.}",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "152--153",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

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T1 - AlAs0.56Sb0.44/In0.53Ga0.47As doped multi-channel field effect transistors

AU - Dumka, D. C.

AU - Cueva, G.

AU - Adesida, I.

AU - Hier, H. S.

AU - Aina, O. A.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs0.56Sb0.44/In0.53Ga0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.

AB - The direct current (dc) and radiofrequency (rf) performance of highly linear doped channel field effect transistors (DCFET) with large current density on AlAs0.56Sb0.44/In0.53Ga0.47As lattice matched to InP substrate are reported. The samples were grown using molecular beam epitaxy (MBE). The noise performance of the device is presented and the various pathways in terms of the device structure needed for further improvement in linearity are discussed.

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T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -