AlGaAs/InGaAs PHEMTs with asymmetrically recessed gates achieved through a four layer resist process

R. Grundbacher, A. A. Ketterson, Y. C. Kao, I. Adesida

Research output: Contribution to journalArticlepeer-review

Fingerprint Dive into the research topics of 'AlGaAs/InGaAs PHEMTs with asymmetrically recessed gates achieved through a four layer resist process'. Together they form a unique fingerprint.

Physics & Astronomy