AlGaN-GaN heterostructure FETs with offset gate design

R. Gaska, Q. Chen, J. Yang, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida

Research output: Contribution to journalArticle

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Abstract

The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

Original languageEnglish
Pages (from-to)1255-1257
Number of pages3
JournalElectronics Letters
Volume33
Issue number14
DOIs
Publication statusPublished - Jul 3 1997
Externally publishedYes

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Keywords

  • Field effect transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Gaska, R., Chen, Q., Yang, J., Asif Khan, M., Shur, M. S., Ping, A., & Adesida, I. (1997). AlGaN-GaN heterostructure FETs with offset gate design. Electronics Letters, 33(14), 1255-1257. https://doi.org/10.1049/el:19970818