AlGaN-GaN heterostructure FETs with offset gate design

R. Gaska, Q. Chen, J. Yang, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.

Original languageEnglish
Pages (from-to)1255-1257
Number of pages3
JournalElectronics Letters
Volume33
Issue number14
Publication statusPublished - Jul 3 1997
Externally publishedYes

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Transconductance
Field effect transistors
Electric breakdown
Heterojunctions

Keywords

  • Field effect transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Gaska, R., Chen, Q., Yang, J., Asif Khan, M., Shur, M. S., Ping, A., & Adesida, I. (1997). AlGaN-GaN heterostructure FETs with offset gate design. Electronics Letters, 33(14), 1255-1257.

AlGaN-GaN heterostructure FETs with offset gate design. / Gaska, R.; Chen, Q.; Yang, J.; Asif Khan, M.; Shur, M. S.; Ping, A.; Adesida, I.

In: Electronics Letters, Vol. 33, No. 14, 03.07.1997, p. 1255-1257.

Research output: Contribution to journalArticle

Gaska, R, Chen, Q, Yang, J, Asif Khan, M, Shur, MS, Ping, A & Adesida, I 1997, 'AlGaN-GaN heterostructure FETs with offset gate design', Electronics Letters, vol. 33, no. 14, pp. 1255-1257.
Gaska R, Chen Q, Yang J, Asif Khan M, Shur MS, Ping A et al. AlGaN-GaN heterostructure FETs with offset gate design. Electronics Letters. 1997 Jul 3;33(14):1255-1257.
Gaska, R. ; Chen, Q. ; Yang, J. ; Asif Khan, M. ; Shur, M. S. ; Ping, A. ; Adesida, I. / AlGaN-GaN heterostructure FETs with offset gate design. In: Electronics Letters. 1997 ; Vol. 33, No. 14. pp. 1255-1257.
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