AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier

R. Schwindt, V. Kumar, O. Aktas, J. W. Lee, I. Adesida

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The dc characteristics of individual 0.25-μm × 150-μm transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of -6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz.

Original languageEnglish
Pages (from-to)2631-2634
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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