Abstract
This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.
| Original language | English |
|---|---|
| Title of host publication | ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems |
| Publisher | IEEE Computer Society |
| DOIs | |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Netherlands Duration: Apr 17 2002 → Apr 19 2002 |
Other
| Other | 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 |
|---|---|
| Country | Netherlands |
| City | Oranjestad, Aruba |
| Period | 4/17/02 → 4/19/02 |
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ASJC Scopus subject areas
- Hardware and Architecture
- Control and Systems Engineering
Cite this
AlGaN/GaN HEMTs on sapphire. / Kumar, V.; Adesida, I.
ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems. IEEE Computer Society, 2002. 1004070.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - AlGaN/GaN HEMTs on sapphire
AU - Kumar, V.
AU - Adesida, I.
PY - 2002
Y1 - 2002
N2 - This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.
AB - This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.
UR - http://www.scopus.com/inward/record.url?scp=84900308533&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84900308533&partnerID=8YFLogxK
U2 - 10.1109/ICCDCS.2002.1004070
DO - 10.1109/ICCDCS.2002.1004070
M3 - Conference contribution
BT - ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
PB - IEEE Computer Society
ER -