AlGaN/GaN HEMTs on sapphire

V. Kumar, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.

Original languageEnglish
Title of host publicationICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
PublisherIEEE Computer Society
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Netherlands
Duration: Apr 17 2002Apr 19 2002

Other

Other4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002
CountryNetherlands
CityOranjestad, Aruba
Period4/17/024/19/02

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering

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  • Cite this

    Kumar, V., & Adesida, I. (2002). AlGaN/GaN HEMTs on sapphire. In ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems [1004070] IEEE Computer Society. https://doi.org/10.1109/ICCDCS.2002.1004070