AlGaN/GaN HEMTs on sapphire

V. Kumar; I. Adesida

doi:10.1109/ICCDCS.2002.1004070

AlGaN/GaN HEMTs on sapphire

V. Kumar, I. Adesida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f_T) of 107 GHz, and maximum frequency of oscillation (f_max) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.

Original language	English
Title of host publication	ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
Publisher	IEEE Computer Society
DOIs	https://doi.org/10.1109/ICCDCS.2002.1004070
Publication status	Published - 2002
Externally published	Yes
Event	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 - Oranjestad, Aruba, Netherlands Duration: Apr 17 2002 → Apr 19 2002

Other

Other	4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002
Country	Netherlands
City	Oranjestad, Aruba
Period	4/17/02 → 4/19/02

ASJC Scopus subject areas

Hardware and Architecture
Control and Systems Engineering

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title = "AlGaN/GaN HEMTs on sapphire",

abstract = "This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.",

author = "V. Kumar and I. Adesida",

year = "2002",

doi = "10.1109/ICCDCS.2002.1004070",

language = "English",

booktitle = "ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems",

publisher = "IEEE Computer Society",

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note = "4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002 ; Conference date: 17-04-2002 Through 19-04-2002",

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T1 - AlGaN/GaN HEMTs on sapphire

AU - Kumar, V.

AU - Adesida, I.

PY - 2002

Y1 - 2002

N2 - This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.

AB - This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 μm grown by MOCVD. Results for MBE-grown devices are also presented.

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DO - 10.1109/ICCDCS.2002.1004070

M3 - Conference contribution

AN - SCOPUS:84900308533

BT - ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems

PB - IEEE Computer Society

T2 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS 2002

Y2 - 17 April 2002 through 19 April 2002

ER -

AlGaN/GaN HEMTs on sapphire

Abstract

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