AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

V. Kumar; W. Lu; R. Schwindt; A. Kuliev; G. Simin; J. Yang; M. Asif Khan; Ilesanmi Adesida

doi:10.1109/LED.2002.801303

AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz

V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

206 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (f_T) of 121 GHz and maximum frequency of oscillation (f_max) of 162 GHz were measured on these devices. These f_T and f_max values are the highest ever reported values for GaN-based HEMTs.

Original language	English
Pages (from-to)	455-457
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	8
DOIs	https://doi.org/10.1109/LED.2002.801303
Publication status	Published - Aug 2002
Externally published	Yes

Keywords

GaN
High electron mobility transistors (HEMTs)
SiC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2002.801303

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@article{65110d5592d94f97a964f538450d78a4,

title = "AlGaN/GaN HEMTs on SiC with fT of over 120 GHz",

abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured on these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs.",

keywords = "GaN, High electron mobility transistors (HEMTs), SiC",

author = "V. Kumar and W. Lu and R. Schwindt and A. Kuliev and G. Simin and J. Yang and Khan, {M. Asif} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received February 8, 2002; revised May 23, 2002. This work was supported in part by the Office of Naval Research under Contracts N00014-01-1-1000 (Monitor: Dr. J. Zolper) and N0014-01-1-1072 (Monitor: Dr. J. Zolper), the Triquint Corporation, and by the Ballistic Missile Defense Organization (BMDO) under Army SMDC contract DASG60-98-1-0004, monitored by T. Bauer, Dr. B. Strickland, and Dr. K. Wu. The review of this letter was arranged by Editor D. Ueda.",

year = "2002",

month = aug,

doi = "10.1109/LED.2002.801303",

language = "English",

volume = "23",

pages = "455--457",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

AU - Kumar, V.

AU - Lu, W.

AU - Schwindt, R.

AU - Kuliev, A.

AU - Simin, G.

AU - Yang, J.

AU - Khan, M. Asif

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received February 8, 2002; revised May 23, 2002. This work was supported in part by the Office of Naval Research under Contracts N00014-01-1-1000 (Monitor: Dr. J. Zolper) and N0014-01-1-1072 (Monitor: Dr. J. Zolper), the Triquint Corporation, and by the Ballistic Missile Defense Organization (BMDO) under Army SMDC contract DASG60-98-1-0004, monitored by T. Bauer, Dr. B. Strickland, and Dr. K. Wu. The review of this letter was arranged by Editor D. Ueda.

PY - 2002/8

Y1 - 2002/8

N2 - AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured on these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs.

AB - AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured on these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs.

KW - GaN

KW - High electron mobility transistors (HEMTs)

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0036686431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036686431&partnerID=8YFLogxK

U2 - 10.1109/LED.2002.801303

DO - 10.1109/LED.2002.801303

M3 - Article

AN - SCOPUS:0036686431

VL - 23

SP - 455

EP - 457

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -