Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 μm gate length have been fabricated. These 0.12-μm gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured on these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs.
Original language | English |
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Pages (from-to) | 455-457 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 23 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 1 2002 |
Externally published | Yes |
Keywords
- GaN
- High electron mobility transistors (HEMTs)
- SiC
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering