AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise

Wu Lu, Jinwei Yang, M. Asif Khan, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

226 Citations (Scopus)

Abstract

High performance AlGaN/GaN high electron mobility transistors (HEMTs) with 0.12 μm gate-length have been fabricated on an insulating SiC substrate. The devices exhibited an extrinsic transconductance of 217 mS/mm and current drive capability as high as 1.19 A/mm. The threshold voltage of the devices was -5.5 V. For AlGaN/GaN HEMTs with the same gate-length, a record high unity current gain cut-off frequency (fT) of 101 GHz and a maximum oscillation frequency (fMAX) of 155 GHz were measured at Vds = 16.5 V and Vgs = 5.0 V. The microwave noise performances of the devices were characterized from 2 to 18 GHz at different drain biases and drain currents. At a drain bias of 10 V and a gate bias of -4.8 V, the devices exhibited a minimum noise figure (NFmin) of 0.53 dB and an associated gain (Ga) of 12.1 dB at 8 GHz. Also, at a fixed drain bias of 10 V with the drain current swept, the lowest NFmin of 0.72 dB at 12 GHz was obtained at Ids = 100 mA/mm and a peak Ga of 10.59 dB at 12 GHz was obtained at Ids = 150 mA/mm. With the drain current held at 114 mA/mm and drain bias swept, the lowest NFmin of 0.42 dB and 0.77 dB were obtained at Vds = 8 V at 8 GHz and 12 GHz, respectively. To our knowledge, these are the best microwave noise performances of any GaN-based FETs ever reported.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume48
Issue number3
DOIs
Publication statusPublished - Mar 2001
Externally publishedYes

Keywords

  • GaN
  • HEMTs
  • Microwave noise
  • f
  • f

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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