Abstract
A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.
Original language | English |
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Pages (from-to) | 771-772 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 40 |
Issue number | 12 |
DOIs | |
Publication status | Published - Jun 10 2004 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering