AlGaN/InGaN HEMTs for RF current collapse suppression

W. Lanford; V. Kumar; R. Schwindt; A. Kuliev; I. Adesida; A. M. Dabiran; A. M. Wowchak; P. P. Chow; J. W. Lee

doi:10.1049/el:20040398

AlGaN/InGaN HEMTs for RF current collapse suppression

W. Lanford, V. Kumar, R. Schwindt, A. Kuliev, I. Adesida, A. M. Dabiran, A. M. Wowchak, P. P. Chow, J. W. Lee

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (g_m) with a maximum drain current of 880 mA/mm, a peak g_m of 156 mS/mm, an f _T of 17.3 GHz, and an f_MAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

Original language	English
Pages (from-to)	771-772
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040398
Publication status	Published - Jun 10 2004

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "AlGaN/InGaN HEMTs for RF current collapse suppression",

abstract = "A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.",

author = "W. Lanford and V. Kumar and R. Schwindt and A. Kuliev and I. Adesida and Dabiran, {A. M.} and Wowchak, {A. M.} and Chow, {P. P.} and Lee, {J. W.}",

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TY - JOUR

T1 - AlGaN/InGaN HEMTs for RF current collapse suppression

AU - Lanford, W.

AU - Kumar, V.

AU - Schwindt, R.

AU - Kuliev, A.

AU - Adesida, I.

AU - Dabiran, A. M.

AU - Wowchak, A. M.

AU - Chow, P. P.

AU - Lee, J. W.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

AB - A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (gm) with a maximum drain current of 880 mA/mm, a peak gm of 156 mS/mm, an f T of 17.3 GHz, and an fMAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

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